Influence of surface states and bulk traps on non-equilibrium phenomena at GaAs and GaN surfaces

• Autorzy: Miczek M. , Adamowicz B. , Hashizume T. , Hasegawa H.
• Konferencja: Surface Physics and Thin-Films Structure Seminar ; 17-21.05.2005 ; Szklarska Poręba, Poland
• Języki publikacji: EN

Abstrakty

EN

The influence of surface state density Nss and bulk non-radiative lifetime t(tau) on room temperature photoluminescence quantum efficiency Y_{PL and surface photovoltage (SPV) versus the excitation light intensity F(fi) was studied theoretically for GaAs and wurtzite GaN using self-consistent computer simulations. It was demonstrated that SPV(F) dependences are more sensitive than YPL (F) to a change in magnitude of Nss, especially for high Nss and at low F, whereas SPV is practically insensitive to t contrary to YPL. The simultaneous measurement of YPL and SPV versus , combined with rigorous computer analysis, seems to be a very promising method for contactless characterization of the surface and bulk trap parameters.}

Słowa kluczowe

EN

gallium arsenide, gallium nitride, surface states, bulk traps, photoluminescence, surface photovoltage.

• Wydawca: Oficyna Wydawnicza Politechniki Wrocławskiej
• Czasopismo: Optica Applicata
• Rocznik: 2005
• Tom: Vol. 35, nr 3
• Strony: 355--361
• Opis fizyczny: Bibliogr. 28 poz., wykr.

Twórcy

autor

Miczek M.

• Department of Applied Physics, Institute of Physics, Silesian University of Technology, Boleslawa Krzywoustego 2, 44-100 Gliwice, Poland
• Research Center for Integrated Quantum Electronics and Graduate School of Electronics and Information Engineering, Hokkaido University, North 13 West 8, Sapporo 060-8628, Japan

autor

Adamowicz B.

• Department of Applied Physics, Institute of Physics, Silesian University of Technology, Boleslawa Krzywoustego 2, 44-100 Gliwice, Poland

autor

Hashizume T.

• Research Center for Integrated Quantum Electronics and Graduate School of Electronics and Information Engineering, Hokkaido University, North 13 West 8, Sapporo 060-8628, Japan

autor

Hasegawa H.

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