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Wide spectra characteristics of gain and carrier-induced refractive index change from measured amplified spontaneous emission spectra

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Wybrane pełne teksty z tego czasopisma
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Warianty tytułu
Języki publikacji
EN
Abstrakty
EN
Based on our derived analytical equation directly relating small signal gain (SSG) with amplified spontaneous emission (ASE) of traveling-wave semiconductor optical amplifier (TWA), SSG spectra in an extended wavelength range from 1460 to 1660 nm are directly calculated from experimentally measured ASE spectra. Subsequently, carrier-induced refractive index changes for various injection currents are obtained with the same spectral range. We demonstrate the availability of our characterizing method by the determination of wide spectra characteristics from a bulk TWA with angled facets.
Czasopismo
Rocznik
Strony
377--382
Opis fizyczny
Bibliogr. 11 poz., wykr.
Twórcy
autor
  • Department of Optoelectronic Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P.R. China
autor
  • Department of Optoelectronic Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P.R. China
autor
  • Department of Optoelectronic Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P.R. China
autor
  • Department of Optoelectronic Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P.R. China
autor
  • Department of Optoelectronic Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P.R. China
Bibliografia
  • [1] Hong Y., Spencer P.S., Shore K.A., Wide-band polarization-free wavelength conversion based on four-wave-mixingn semiconductor optical amplifiers, IEEE Journal of Quantum Electronics 40(2), 2004, pp. 152-6.
  • [2] Varrazza, R., Djordjevic I.B., Yu S., Active vertical-coupler-based optical crosspoint switch matrix for optical packed-switching applications, Journal of Lightwave Technology 22(9), 2004, pp. 2034-42.
  • [3] Hakki B.W., Paoli T.L., CW degradation at 300°K of GaAs double-heterostructure junction lasers. II. Electronic gain, Journal of Applied Physics 44(9), 1973, pp. 4113-9.
  • [4] Chang C.S., Chuang S.L., Minch J.R., Fang W.-C.W., Chen Y.K., Tanbun-Ek T., Amplified spontaneous emission spectroscopy in strained quantum-well lasers, IEEE Journal on Selected Topics in Quantum Electronics 1(4), 1995, pp. 1100-7.
  • [5] Fu L., Wu L., Schweizer H., The extension of gain spectra and accurate determination of the quasi-Fermi-level separation from measured amplified spontaneous emission spectra, Applied Physics Letters 75(20), 1999, pp. 3069-71.
  • [6] O'Mahony M.J., Semiconductor laser optical amplifiers for use in future fiber systems, Journal of Lightwave Technology 6(4), 1988, pp. 531-44.
  • [7] Shaklee K.L., Nahory R.E., Leheny R.F., Optical gain in semiconductors, Journal of Luminescence 7, 1973, pp. 284-309.
  • [8] Henry C.H., Logan R.A., Merritt F.R., Measurement of gain and absorption spectra in AlGaAs buriedheterostructure lasers, Journal of Applied Physics 51(6), 1980, pp. 3042-50.
  • [9] O B.-H., Choo H.-R., Kim H.-M., Kim J.-S., Oh D.-K., Kim H.-R., Kim H.-M., Pyun K.-E., Cavity length dependence ofhigh-speed 1.55-m multiple-quantum-well laser diode characteristics, IEEE Photonics Technology Letters 9(2), 1997, pp. 164-6.
  • [10] Hunziker G., Knop W., unger P., Harder C., Gain, refractive index, linewidth enhancement factor from spontaneous emission of strained GalnP quantum-well lasers, IEEE Journal of Quantum Electronics 31(4), 1995, pp. 643-6.
  • [11] Henry C.H., Logan R.A., Bertness K.A., Spectral dependence of the change in refractive index due to carrier injection in GaAs lasers, Journal of Applied Physics 52(7), 1981, pp. 4457-61.
Typ dokumentu
Bibliografia
Identyfikator YADDA
bwmeta1.element.baztech-article-BWA0-0006-0024
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