Comparative study of sensor and material properties on In₀.₅₃Ga₀.₄₇As/InP fabricated by MBE and MOCVD

Wolkenberg, A.; Przesławski, T.

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Tytuł artykułu

Comparative study of sensor and material properties on In₀.₅₃Ga₀.₄₇As/InP fabricated by MBE and MOCVD

Autorzy

Wolkenberg A. , Przesławski T.

Treść / Zawartość

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Abstrakty

We report the galvanomagnetic properties of Hall and magnetoresistor cross-shaped sensors with lateral dimensions 2x3 mm. The comparative study of epilayers fabricated by MBE and MOCVD are presented. The measured parameters of these devices gave an interesting insight into their behaviour at temperatures ranging from LHe to room temperature. The large changes of the galvanomagnetic parameters vs. magnetic field and temperature allow these devices to be used as field or temperature sensors.

Słowa kluczowe

sensor magnetic properties

Wydawca

Institute of Electron Technology

Czasopismo

Electron Technology : Internet Journal

Rocznik

2005/2006

Tom

Vol. 37/38, nr 1

Strony

1--9

Opis fizyczny

Bibliogr. 28 poz., wykr.

Twórcy

autor

Wolkenberg A.

Institute of Electron Technology, al. Lotników 32/46, 02-668 Warszawa, Poland

autor

Przesławski T.

Institute of Electron Technology, al. Lotników 32/46, 02-668 Warszawa, Poland

Bibliografia

1. U. DIBBERN, Magnetic Field Sensors Using the Magnetoresistive Effect, Sensors a. Actuators, 1986, 10, 127-140.
2. YOSHINOBU SUGIYAMA, Recent Progress on Magnetic Sensors with Nanostructures and Applications, J. Vacuum Sci. Technol. B, 1995, 13, 1075-1083.
3. R. KYBURZ, J. SCHMIDT, R. S. POPOVIC, Highly Sensitive In0.53Ga0.47As/InP Hall Sensors Grown by MOVPE, IEEE Trans. on Electron Dev., 1994, 41, 315-320
4. G. VÉRTESY, A. GASPARICS, J. SZÖLLÖSY, High Sensitivity Magnetic Field Sensor, Sensors a. Actuators, 2000, 85, 202-208.
5. R. S. POPOVIC, Not-Plate-Like Hall Magnetic Sensors and Their Applications, Sensors a. Actuators, 2000, 85, 9-17.
6. G. BOERO, M. DEMIERRE, P. A. BESSE, R. S. POPOVIC, MicroHall Devices: Performance, Technologies and Applications, Sensors a. Actuators A, 2003,106, 314-320.
7. ICHIRO SHIBASAKI, Mass Production of InAs Hall Elements by MBE, J. Crystal Growth, 1997, 175/176, 13-21
8. M. BEHET, J. DE BOECK, G. BORGHS, P. MIJLEMANS, Comparative Study on the Performance of InAs/Al0.2Ga0.8Sb Quantum Well Hall Sensors on Germanium and GaAs Substrates, Sensors a. Actuators, 2000, 79, 175-178.
9. Ch. S. ROUMENIN, D. NIKOLOV, A. IVANOV, A Novel Parallel Field Hall Sensor with Low Offset and Temperature Drift Based 2D Integrated Magnetometer, Sensors a. Actuators A, 2003, 115, 303-307.
10. T. PRZESŁAWSKI, A. WOLKENBERG, K. REGIŃSKI, J. KANIEWSKI, Heterojunction In0.53Ga0.47As/InP Magnetic Field Sensors Fabricated by Molecular Beam Epitaxy, Optica Appl., 2002, XXXII, 511-515.
11. T. PRZESŁAWSKI, A. WOLKENBERG, K. REGIŃSKI, J. KANIEWSKI, Sensitive In0.53Ga0.47As/InP(SI) Magnetic Field Sensors, phys. stat. sol. (c), 2004, 1, 242-246.
12. J. HEREMANS, Solid State Magnetic Field Sensors and Applications, J. Phys. D: Appl. Phys., 1993, 26, 1149-1168.
13. J. HEREMANS, Narrow-Gap Semiconductor Magnetic Field Sensors and Applications, Semicond. Sci. Technol., 1993, 8, S424-S430.
14. H. J. LIPPMANN, F. KUHRT, Der Geometrieeinfluss auf den transversalen magnetischen Widerstandseffekt bei rechtförmigen Halbleiterplatten, Z. Naturforsch. 1958, 13A, 462-483.
15. R. S. POPOVIC, Hall Effect Devices, Bristol, Adam Hilger 1991.
16. J. HAEUSLER, H. J. LIPPMANN, Hallgeneratoren mit kleinem Linearisierungsfehler, Solid State Electron., 1968, 11, 173-182
17. A. KOBUS, J. TUSZYŃSKI, Hallotrony i gaussotrony, WNT, Warszawa 1966.
18. E. PETTENPAUL, J. HUBER, H. WEIDLICH, W. FLOSSMANN, U. VON BORCKE, GaAs Hall Devices Produced by Local Ion Implanlation, Solid State Electron., 1981, 24, 781-786.
19. H. P. BALTES, R. S. POPOVIC, Integrated Semiconductor Magnetic Field Sensors, Proc. IEEE, 1986, 74, 1107-1132.
20. R. S. POPOVIC, Hall-Effect Devices, Sensors a. Actuators, 1989, 17, 39-53.
21. R. S. POPOVIC, J. A. FLANGAN, P. A. BESSE, The Future of Magnetic Sensors, Sensors a. Actuators, 1996, A56, 39-55.
22. V. P. KUNETS, W. HOERSTEL, H. KOSTIAL, H. KISSEL, U. MULLER, G. G. TARASOV, Y. I. MAZUR, Z. YA. ZHUCHENKO, W. T. MASSELINK, High Electric Field Performance of Al0.3Ga0.7As/GaAs and Al0.3Ga0.7As/GaAs/In0.3Ga0.7As Quantum Well Micro-Hall Devices, Sensors a. Actuators, 2002, A101, 62-68.
23. A. WOLKENBERG, T. PRZESŁAWSKI, J. KANIEWSKI, J. BĄK-MISIUK, K. REGIŃSKI, Thickness Dependence of the Structural and Electrical Properties of InAs Layers Epitaxially Grown by MBE on GaAs (001), Mater. Sei. Eng. 2000, B 77, 250-254.
24. A. NEDOLUHA, K. M. KOCH, Zum Mechanismus der Widerstandsänderung im Magnetfeld, Z. für Physik, 1952, 132, 608-620.
25. H. H. WIEDER, Transport Coefficients of InAs Epilayers, Appl. Phys. Lett., 1974, 25, 206-208.
26. P. D. WANG, S. N. HOLMES, TAN LE, R. A. STRADLING, I. T. FERGUSON, A. G. DE OLIVEIRA, Electrical and Magnetooptical Studies of MBE InAs on GaAs, Semicond. Sci. Technol., 1992, 7, 767-786.
27. E. W. SAKER, F. A. CUNNELL, J. T. EDMOND, Indium-Antimonide as a Fluxmeter Material, British J. Appl. Phys. 1955, 6, 217-220.
28. S. KATAOKA, H. YAMADA, Y. SUGIYAMA, H. FUJISADA, New Galvanomagnetic Device with Directional Sensitivity, Proc. IEEE, 1971, B59, 1349-1349.

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