Investigation of structural, optical and lasing properties of YAG:Yb single crystals

• Autorzy: Świrkowicz M. , Skórczakowski M. , Jabczyński J. , Bajor A. , Tymicki E. , Kaczmarek B. , Łukasiewicz T.
• Języki publikacji: EN

Abstrakty

EN

Single crystals of yttrium aluminium garnet (YAG) doped with ytterbium ions of up to 30 at.% were grown by the Czochralski method. Using the growth rate from 1 to 3 mm/h, and the rotation rate from 15 to 30 rpm, single crystals with diameters of up to 22 mm and lengths up to 85 mm were obtained. Using the inductively coupled plasma n optical emission spectroscopy (ICP-OES) method, Yb distribution coefficient was determined to be equal to 1.10±0.02. The following methods: optical absorption spectroscopy, plane and circular polariscope, electron probe microanalysis (EPMA) to determine the radial distribution of Yb ions, X-ray diffraction methods to determine the lattice constant were used. Etch pit density distribution and lasing properties were also investigated. Samples of YAG:Yb crystals with Yb ions contents of 3, 5, 7, and 10 at.% were pumped by 940 nm laser diode for their lasing properties. The best lasing slope efficiency of 40% with respect to the absorbed pump power was achieved at 5 at.% Yb content. The lowest threshold of 2.5 W of the absorbed pump power was observed, however, for a 7 at.% Yb doped sample in quasi hemispherical resonator configuration. These investigations have been found to be in good agreement with polariscopic observations, showing a certain decrease in optical homogeneity with increase in Yb content.

Słowa kluczowe

EN

Czochralski method; YAG:Yb; growth from melt; oxides; optical and lasing properties

• Wydawca: Stowarzyszenie Elektryków Polskich ; Polska Akademia Nauk ; Wojskowa Akademia Techniczna im. Jarosława Dąbrowskiego
• Czasopismo: Opto-Electronics Review
• Rocznik: 2005
• Tom: Vol. 13, No. 3
• Strony: 213--220
• Opis fizyczny: Bibliogr. 19 poz., il., wykr.

Twórcy

autor

Świrkowicz M.

• Institute of Electronic Materials Technology, 133 Wólczyńska Str., 01-919 Warsaw, Poland

autor

Skórczakowski M.

• Institute of Optoelectronics, Military University of Technology, 2 Kaliskiego Str., 00-908 Warsaw, Poland

autor

Jabczyński J.

• Institute of Optoelectronics, Military University of Technology, 2 Kaliskiego Str., 00-908 Warsaw, Poland

autor

Bajor A.

• Institute of Electronic Materials Technology, 133 Wólczyńska Str., 01-919 Warsaw, Poland

autor

Tymicki E.

• Institute of Electronic Materials Technology, 133 Wólczyńska Str., 01-919 Warsaw, Poland

autor

Kaczmarek B.

• Institute of Electronic Materials Technology, 133 Wólczyńska Str., 01-919 Warsaw, Poland

autor

Łukasiewicz T.

• Institute of Electronic Materials Technology, 133 Wólczyńska Str., 01-919 Warsaw, Poland

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