Overview of etching technologies used for HgCdTe

Srivastav, V.; Pal, R.; Vyas, H. P.

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Tytuł artykułu

Overview of etching technologies used for HgCdTe

Autorzy

Srivastav V. , Pal R. , Vyas H. P.

Wybrane pełne teksty z tego czasopisma

http://journals.pan.pl/dlibra/journal/opelre

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Warianty tytułu

Języki publikacji

Abstrakty

This review is an attempt to survey all the etching techniques that have been used since the very beginning stages of HgCdTe device fabrication to the most recent ones. Recent state of the art device architectures such as high-density focal plane arrays, avalanche photodiodes, two-colour and multispectral detectors require isolation of high aspect ratio trenches with least etch induced damage at the surface and sidewalls. The most widely used dry etching techniques are electron cyclotron resonance plasma and inductively coupled plasma processing. Almost all the etching technologies have been summarized from chemistry and device perspective.

Słowa kluczowe

wet etching dry etching mesa etching ECR plasma system etch lag

Wydawca

Stowarzyszenie Elektryków Polskich
Polska Akademia Nauk
Wojskowa Akademia Techniczna im. Jarosława Dąbrowskiego

Czasopismo

Opto-Electronics Review

Rocznik

2005

Tom

Vol. 13, No. 3

Strony

197--211

Opis fizyczny

Bibliogr. 82 poz., wykr.

Twórcy

autor

Srivastav V.

vanya_srivastav/sspl@ssplnet.org

Solid State Physics Laboratory, Lucknow Road, Delhi 110054, India

autor

Pal R.

Solid State Physics Laboratory, Lucknow Road, Delhi 110054, India

autor

Vyas H. P.

Solid State Physics Laboratory, Lucknow Road, Delhi 110054, India

Bibliografia

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