Electrical properties of Zn-Bi-O thin films deposited by r.f. magnetron sputtering

• Autorzy: Kacprzyk R. , Ziaja J.
• Konferencja: II International Conference on Advances in Processing, Testing and Application of Dielectric Materials, 15-17 September, Wrocław 2004, TAB
• Języki publikacji: EN

Abstrakty

EN

Electrical properties of Zn-Bi-O thin films were characterised in the paper. The layers were deposited on metal substrates by application of the r.f. magnetron sputtering of Zn-Bi substrate in oxygen atmosphere. Properties of the samples were described by current-voltage characteristics (obtained for dc. polarisation) and results of measurements of electrical permittivity ε and loss factor (tgδ) (in the range of acoustic frequencies). Characteristics obtained for all of the samples exhibited strong non-linearity (varistor effect). Hopping model for charge carriers transport was suggested as the most probable mechanism of electrical conduction in the layers. Other conduction models were also discussed in the paper. Additionally an electromotive force of the order of 0.17V was detected for fresh samples. The presented results of preliminary investigations may create a base for the wider investigation of conduction processes appearing in thin Zn-Bi-O layers.

Słowa kluczowe

EN

varistor; Zn-Bi-O; thin film

• Wydawca: Oficyna Wydawnicza Politechniki Wrocławskiej
• Czasopismo: Prace Naukowe Instytutu Podstaw Elektrotechniki i Elektrotechnologii Politechniki Wrocławskiej. Konferencje
• Rocznik: 2004
• Tom: Vol. 40, nr 15
• Strony: 153--157
• Opis fizyczny: Bibliogr. 13 poz., rys., tab.

Twórcy

autor

Kacprzyk R.

• Institute of Electrical Engineering Fundamentals, Wrocław University of Technology

autor

Ziaja J.

• Institute of Electrical Engineering Fundamentals, Wrocław University of Technology

Bibliografia

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