Stress degradation of Ta2O5 films on silicon

• Autorzy: Novkovski N. , Atanassova E.
• Konferencja: II International Conference on Advances in Processing, Testing and Application of Dielectric Materials, 15-17 September, Wrocław 2004
• Języki publikacji: EN

Abstrakty

EN

Degradation of interface and film properties during constant voltage and constant current stress of Ta₂O₅ films grown on silicon was studied. It was shown that the degradation consists of positive and negative charge trapping and thinning of the extremely thin silicon dioxide created between the Ta₂O₅ and the silicon substrate.

Słowa kluczowe

EN

high-k dielectrics; Ta2O5; stress degradation; silicon

• Wydawca: Oficyna Wydawnicza Politechniki Wrocławskiej
• Czasopismo: Prace Naukowe Instytutu Podstaw Elektrotechniki i Elektrotechnologii Politechniki Wrocławskiej. Konferencje
• Rocznik: 2004
• Tom: Vol. 40, nr 15
• Strony: 16--19
• Opis fizyczny: Bibliogr. 6 poz., rys.

Twórcy

autor

Novkovski N.

• Institute of Physics, Faculty of Natural Sciences and Mathematics Gazibaba b.b., 1000 Skopje, Macedonia

autor

Atanassova E.

• Institute of Solid State Physics, Bulgarian Academy of Sciences, Blvd "Tzarigradsko Chausse" 72, 1784 Sofia, Bulgaria

Bibliografia

• [1] LO G.Q., KWONG D.L., and LEE S., Metal-oxide-semiconductor characteristics of chemical vapor deposited Ta2O5 films, Appl. Phys. Lett., 60, 3286 (1992)
• [2] CHANELIERE C., AUTRAN J.L., DEVINE R.A.B., and B. BALLAND, Tantalum pentoxide (Ta2O5) thin films for advanced dielectric applications, Matter. Sci. and Eng. R22, 269-322 (1998)
• [3] ATANASSOVA E., NOVKOVSKI N., DIMITROVA A., and PECOVSKA-GJORGJEVICH M., Oxygen annealing modification of conduction mechanism in thin rf sputtered Ta2O5 on Si, Solid St. Electron. 46, 1887 (2002)
• [4] INOUE N., MONNAKA T., KASHIWABARA Sh., and FUJIMOTO R., Thickness of Ta2O5 thin-films deposited by a new pulsed laser deposition technique, Appl. Surf. Sci. 127-129, 536 (1998)
• [5] NOVKOVSKI N., PECOVSKA-GJORGJEVICH M., ATANASSOVA E. and DIMITROVA T., Stress Degradation of Low Field Leakage in Aluminium Gate MOS Structures Containing RF Magnetron Sputtered Thin Ta2O5 films, Phys. Stat. Sol. (a) 172, R9 (1999)
• [6] NOVKOVSKI N. and ATANASSOVA E., Stress Characteristics of RF Sputtered Ta2O5 films on Silicon, to appear in Proc. 24nd international Conference on Microelectronics (MIEL), Niš, Serbia, 16-19 May, 2004