Correction of the electric resistivity distribution of Si wafers using selective neutron transmutation doping (SNTD) in MARIA nuclear research reactor

• Autorzy: Tarchalski M. , Kordyasz A. J. , Pytel K. , Dorosz D.
• Języki publikacji: EN

Abstrakty

EN

The result of the electric resistivity distribution modification in silicon wafers, by means of selective neutron transmutation doping (SNTD) method in the MARIA nuclear research reactor at Świerk/Otwock (Poland) is presented. Silicon wafer doping system has been fully designed for the MARIA reactor, where irradiation took place. The silicon wafer resistivity distribution after SNTD has been measured by the capacity voltage (C-V) method. In this article we show first results of this correction technique. The result of the present investigation is that the planar resolution of the correction process is about 4 mm. It is the full width at half maximum (FWHM) of the resistivity distribution produced by thermal neutrons irradiation of Si wafer through a 3 mm hole in the Cd-mask.

Słowa kluczowe

EN

silicon wafer; thermal neutron doping; silicon resistivity homogeneity; silicon resistivity heterogeneity; neutron transmutation doping (NTD); selective neutron transmutation doping (SNTD); MARIA nuclear research reactor

• Wydawca: Institute of Nuclear Chemistry and Technology
• Czasopismo: Nukleonika
• Rocznik: 2012
• Tom: Vol. 57, No. 3
• Strony: 363--367
• Opis fizyczny: Bibliogr. 6 poz., rys.

Twórcy

autor

Tarchalski M.

autor

Kordyasz A. J.

autor

Pytel K.

autor

Dorosz D.

• National Centre for Nuclear Research (NCBJ), 7 Andrzeja Sołtana Str., 05-400 Otwock/Świerk, Poland, Tel.: [phone], Fax: [phone]

Bibliografia

• 1. Burger P (1984) Manufacturing performance and new developments in silicon counters in high energy physics. Nucl Instrum Methods Phys Res 226:112–116
• 2. Gessner T, Schmidt B (1983) The resistivity inhomogeneity and the maximum possible mean resistivity of neutron-transmutation doped silicon. J Phys D: Appl Phys 16:861–868
• 3. Kordyasz AJ (2007) Improvement of silicon technology for FAZIA digital pulse analysis. In: Proc of the Int Conf FAZIA Days in Naples, October 4–5, 2007
• 4. Kordyasz AJ (2008) Towards correction of resistivity distribution on n-type Si wafers using selective transmutation doping (SnTD) in FAZIA. In: Proc of the Int Conf 3rd FAZIA Days. FAZIA Meeting Huelva, 27–28 November 2008, Spain
• 5. Kordyasz AJ, Kowalczyk M, Bednarek A et al. (2009) Determination of Si wafer resistivity distributions by C-V measurements. Proceedings of Science (RD09) 016
• 6. Severin PJ, Poodt GJ (1972) Capacitance-voltage measurement with a mercury-silicon diode. J Electrochem Soc: Solid-State Science and Technology 119;10:1384–1389