Acoustelectric method for investigation of electrical carrier mobility of real GaP:Te (110) surface

• Autorzy: Pustelny T. , Pustelny B.
• Języki publikacji: EN

Abstrakty

EN

The acoustic method of investigating the carrier mobility in the near-surface region of a semiconductor is presented. In this method the transverse acoustoelectric voltage versus the absorbed surface acoustic wave power was measured to determine nondestructively the carrier mobilites. In the layered structure: piezoelectric - semiconductor, the majority and minority carrier mobilities can be determined basing on the field effect. Single GaP:Te(110) crystals have been investigated after various kinds pf surface treatment. The carrier mobility values range from 75 to 120 [cm2/ V s]. The results determined by means of the TAV method are in satisfactory agreement with the results obtained by Hall measurements.

• Wydawca: Silesian Division of Polish Acoustical Society
• Czasopismo: Molecular and Quantum Acoustics
• Rocznik: 2007
• Tom: Vol. 28
• Strony: 223--227
• Opis fizyczny: Bibliogr. 14 poz., rys.

Twórcy

autor

Pustelny T.

autor

Pustelny B.

• Institut of Physics, Silesian University of Technology ul.Krzywoustego 2, 44-100 Gliwice, Poland

Bibliografia

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