Influence of powerful laser radiation on formation of pores in Si by electrochemical etching

• Autorzy: Medvid A. , Onufrijevs P. , Fedorenko L. , Yusupov M. , Dauksta E.
• Konferencja: 8th International Conference on Global Research and Education – Inter-Academia 2009
• Języki publikacji: EN

Abstrakty

EN

The influence of strongly absorbing N2 laser radiation on pores formation on a surface of Si single crystal has been investigated using optical microscope and atomic force microscope. After irradiation by the laser and subsequent electrochemical etching in HF acid solution morphological changes of the irradiated parts of a surface of Si were observed. At the same time, pores formation on the nonirradiated parts of Si surface took place. The porous part of the Si surface is characterized by strong photoluminescence in red part of spectra with maximum at 1.88 eV. Suppression of the pores formation by laser radiation is explained with inversion of Si type condition from p to n. This fact is explained by Thermogradient effect - generation and redistribution of the intrinsic defects in gradient of temperature. It was shown that the depth of p-Si layer on n-Si ubstrate depends on intensity of laser radiation and it increases with intensity of laser radiation. The results of the investigation can be used for optical recording and storage of information on surface of semiconductors.

Słowa kluczowe

EN

porous Si; laser; optical storage; chemical etching

• Wydawca: Łukasiewicz Industrial Research Institute for Automation and Measurements PIAP
• Czasopismo: Journal of Automation Mobile Robotics and Intelligent Systems
• Rocznik: 2009
• Tom: Vol. 3, No. 4
• Strony: 166--168
• Opis fizyczny: Bibliogr. 20 poz., rys.

Twórcy

autor

Medvid A.

autor

Onufrijevs P.

autor

Fedorenko L.

autor

Yusupov M.

autor

Dauksta E.

• Riga Technical University, 14 Azenes Str., Riga, LV-1048, Latvia; Institute of Semiconductor Physics National Academy of Science of Ukraine, 45 Pr. Nauki, 252650, Kyiv-28, Ukraine,

Bibliografia

• [1] Canham L.T., „Photoluminescence in porous silicon obtained by hydrothermal etching”. Appl. Phys. Lett., vol. 57 no. 1, 1990, p. 1046.
• [2] Chen Li, Huailin Liao, Li Yang, Ru Huang, „Highperformance integrated inductor and effective crosstalk isolation using post-CMOS selective grown porous silicon (SGPS) technique for RFIC applications”.Solid-State Electronics, vol. 51, 2007, p. 989.
• [3] Adamo R., Anopchenko A., Bettotti P., Cazzanelli M.,D'Amato E., Daldosso N., Ferraioli L., Froner E., Gaburro Z., Guider R., Hossain S.M., Navarro-Urrios D., Pitanti A., Prezioso S., Scarpa M., Spano R., Wang M., Pavesi L., „Low dimensional silicon structures for photonic and sensor applications”. Applied Surface Science, vol. 255, no. 3, 2008, p. 624.
• [4] Memisevic J., Korampally V., Gangopadhyay S., Grant S.A., „Characterization of a novel ultra-low refractive index material for biosensor application”.Sensors and Actuators B Chemical. 2009. (in press)
• [5] Halimaoi A. In: Properties of porous Silicon, edited Leigh Canham, INSPEC: London, 1997.
• [6] H. Nishitani, H. Nakota, „Relaxation spectra of photoluminescence from porous silicon obtained by chemical etching of laser-modified silicon”. Appl. Phys., vol. 31, 1992, p. L1577.
• [7] Allongue P. In: Properties of porous Silicon, INSPFC: London , 1997.
• [8] Fedorenko L.L., Sardarly A.D., Kaganovich E.B., Svechnikov S.V., Dikiy S.P., Baranets S.V., Fiz. Tekh. Poluprovodn., vol. 31, 1997.
• [9] Mada Y., Ione N., „Thermogradient mechanism of pn junction formation by laser radiation in semiconductors”.Appl. Phys. Lett., vol. 48, 1986, p. 1205.
• [10] Jung H., Kwong D.L., „Visible electroluminescence from stain-etched porous Si diodes”. Appl. Phys. Lett., vol. 62, 1992, p. 12.
• [11] Blums Y., Medvid' A. Phys. Stat. Sol. A, vol. l47, 1995, p. K91.
• [12] Medvid' A., Onufrijevs P., Fedorenko L., Rimshans J., Dauksta E. Mater. Sc. & Appl. Chem., vol. 16, 2008, p. 70.
• [13] Fujisawa I.,Japan J. Appl. Phys., vol. 19, 1980, p. 2137.
• [14] Fedorenko L.L., Bolgov S.S., Malyutenko V.K.,Ukr. Phys. J., vol. 20, 1975, p. 2040.
• [15] Bogatyrev V.A., Kachurin G.A. Sov. Phys. Semicond., vol. 11, 1977, p. 100.
• [16] Medvid' A., Fedorenko L., Snitka V. Appl. Sur. Sc., vol. 14, 1999, p. 280.
• [17] A. Vasiliev, Konov V., Korshunov A.,Laser Processing and Diagnostics, edited Banerle D. (Springer-Verlag, Berlin, New York, Tokyo, 1984.
• [18] Kurbatov L., Stojanova I. Reports of Acad. Sc. USSR, vol. 268, 1983, p. 594.
• [19] Medvid' A., Litovchenko V.G.,Korbujak D.V., Fedorenko L.L., et al Radiation Measurements., , vol. 33, 2001, p. 725.
• [20] Medvid' A. Defect and Diffusion Forum, vol. 210-212, 2002, p. 89.