Formation of "black silicon" on a surface of Ni/Si structure by Nd:YAG laser radiation

• Autorzy: Medvid' A. , Karabko A. , Onufrijevs P. , Dauksta E. , Dostanko A.
• Konferencja: 8th International Conference on Global Research and Education – Inter-Academia 2009
• Języki publikacji: EN

Abstrakty

EN

We have shown the possibility to form a new type of material known as "black silicon". After irradiation of a Si sample surface, covered with 30 nm thick Ni layer, by Nd: YAG laser beam at intensity 4.5 MW/cm2 the "black silicon" was formed. The formation and self-organization of conelike microstructures on the Ni/Si surface has been detected by scanning electron microscope (SEM). Light is repeatedly reflected between the cones in the way that most of it is absorbed, therefore the surface becomes like a "black body" absorber. The micro-chemical analysis performed on SEM has shown that the microstructures contain NiSi2. This was approved by presence of LO phonon line in Raman back scattering spectrum. The control of micro-cone shape and height was achieved by changing the laser intensity and number of pulses.

Słowa kluczowe

EN

black silicon; self-organization; microstructures; Nd:YAG laser

• Wydawca: Łukasiewicz Industrial Research Institute for Automation and Measurements PIAP
• Czasopismo: Journal of Automation Mobile Robotics and Intelligent Systems
• Rocznik: 2009
• Tom: Vol. 3, No. 4
• Strony: 140--142
• Opis fizyczny: Bibliogr. 6 poz., rys.

Twórcy

autor

Medvid' A.

autor

Karabko A.

autor

Onufrijevs P.

autor

Dauksta E.

autor

Dostanko A.

• Riga Technical University, 14 Azenes Str., Riga, LV-1048, Latvia; Institute of Semiconductor Physics National Academy of Science of Ukraine, 45 Pr. Nauki, 252650, Kyiv-28, Ukraine

Bibliografia

• [1] Halbwax M., Sarnet T., Delaporte Ph., Sentis M., Etienne H., Torregrosa F., Vervisch V., Perichaud I., Martinuzzi S., “Micro and nano-structuration of silicon by femtosecond laser: Application to silicon photovoltaic cells fabrication”. Thin Solid Films, 2008 vol. 516, pp. 6791-6795.
• [2] http://www.technologyreview.com/energy/21611/
• [3] Liu S., Zhu J., Liu Y., Zhao L., Laser induced plasma in the formation of surface-microstructured silicon . Materials Letters , 2008, vol. 62, pp. 3881-3883.
• [4] Jeon M., Uchiyama H., Kamisako K., “Characterization of Tin-Catalyzed Silicon Nanowires Synthesized by the Hydrogen radical-assisted Deposition method”. Materials Letters, 2009, vol. 63, pp. 246-248.
• [5] Jeon M., Kamisako K., “Aspect of aluminumcatalyzed silicon nanowires synthesized at low temperature and effect of hydrogen radical treatment”. Journal of Alloys and Compounds, 2009, vol. 476, pp. 84-88.
• [6] Zhao F.F., Chen S.Y., Shen Z.X., Gao X.S., Zheng J.Z., See A.K., Chan L.H., “Applications of micro-Raman spectroscopy in salicide characterization for Si device fabrication”. Journal of Vacuum Science and Technology, 2003, vol. B 21, pp. 862-867.