ACdTe X-ray imaging device using vertical thin film field emitter array

• Autorzy: Tsunekawa Y. , Nakagawa N. , Neo Y. , Morii H. , Aokia T. , Mimura H. , Nagao M. , Yoshidab T. , Kanemaru S.
• Konferencja: 8th International Conference on Global Research and Education – Inter-Academia 2009
• Języki publikacji: EN

Abstrakty

EN

We have demonstrated the novel CdTe X-ray imaging device that consists of a Schottky CdTe diode and a Vertical Thin Film Field Emitter Array (VTF-FEA). The Schottky CdTe diode was fabricated by deposied indium (In) thin film on a Cl-doped p-type (p-type) CdTe substrate and Sb2S3 on the opposite side of the CdTe substrate. VTF-FEA was fabricated by ion induced bending (IIB) and etch-back method. The signal current was successfully detected by the recombination of the stored on the surface holes with the emitted electrons from FEA, and it was clarified that it depended on the X-ray intensity. And the imaging device succeeded in obtaining the Cu plate transmission image.

Słowa kluczowe

EN

Vertical Thin Film Field Emitter Array; Schottky CdTe diode; ion induced bending; etch-back method

• Wydawca: Łukasiewicz Industrial Research Institute for Automation and Measurements PIAP
• Czasopismo: Journal of Automation Mobile Robotics and Intelligent Systems
• Rocznik: 2009
• Tom: Vol. 3, No. 4
• Strony: 137--139
• Opis fizyczny: Bibliogr. 3 poz., rys.

Twórcy

autor

Tsunekawa Y.

autor

Nakagawa N.

autor

Neo Y.

autor

Morii H.

autor

Aokia T.

autor

Mimura H.

autor

Nagao M.

autor

Yoshidab T.

autor

Kanemaru S.

• Research Institute of Electronics, Shizuoka Univ., 3-5-1 Johoku, Nakaku Hamamatsu, Shizuoka 432-8011, Japan. Tel/Fax: [phone],

Bibliografia

• [1] Aoki T., Ishida Y., Makino Y., Ohashi G., Y. Tomita, Morii H., Temmyo J., Hatanaka Y., ,Proc. IDW/AD’05, 2005, pp. 2061-2064.
• [2] Yoshida T., et al. J. Vac. Sci. Technol., B 24, 932 (2006).
• [3] Hashiguchi G., Mimura H., Fujita H., J. Appl. Phys., vol. 34, 1995, pp. L883-L885.