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Konferencja
8th International Conference on Global Research and Education – Inter-Academia 2009
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Abstrakty
We have demonstrated the novel CdTe X-ray imaging device that consists of a Schottky CdTe diode and a Vertical Thin Film Field Emitter Array (VTF-FEA). The Schottky CdTe diode was fabricated by deposied indium (In) thin film on a Cl-doped p-type (p-type) CdTe substrate and Sb2S3 on the opposite side of the CdTe substrate. VTF-FEA was fabricated by ion induced bending (IIB) and etch-back method. The signal current was successfully detected by the recombination of the stored on the surface holes with the emitted electrons from FEA, and it was clarified that it depended on the X-ray intensity. And the imaging device succeeded in obtaining the Cu plate transmission image.
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Tom
Strony
137--139
Opis fizyczny
Bibliogr. 3 poz., rys.
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- Research Institute of Electronics, Shizuoka Univ., 3-5-1 Johoku, Nakaku Hamamatsu, Shizuoka 432-8011, Japan. Tel/Fax: +81-53-478-1319, tsunekawa@nvrc.rie.shizuoka.ac.jp
Bibliografia
- [1] Aoki T., Ishida Y., Makino Y., Ohashi G., Y. Tomita, Morii H., Temmyo J., Hatanaka Y., ,Proc. IDW/AD’05, 2005, pp. 2061-2064.
- [2] Yoshida T., et al. J. Vac. Sci. Technol., B 24, 932 (2006).
- [3] Hashiguchi G., Mimura H., Fujita H., J. Appl. Phys., vol. 34, 1995, pp. L883-L885.
Typ dokumentu
Bibliografia
Identyfikator YADDA
bwmeta1.element.baztech-article-BUJ7-0006-0040