Mechanism of nanostructure formation on a surface of CdZnTe crystal by laser irradiation

• Autorzy: Medvid' A. , Mychko A. , Gnatyuk V. A. , Levytskyi S. , Naseka Y.
• Konferencja: 8th International Conference on Global Research and Education – Inter-Academia 2009
• Języki publikacji: EN

Abstrakty

EN

Self-organizing nanometer size structures are observed on the surface of CdZnTe crystal irradiated by strongly absorbed Nd:YAG laser irradiation (LR) at intensity range of 4-12 MW/cm2. According to this model the Thermogradient effect has the main role in the interaction process of LR and semiconductors. The surface state of the CdZnTe under the influence of Nd:YAG laser irradiation has been studied. A state has been defined by atom force microscope. The influence of LR on the photoluminescence spectrahas show that at a threshold intensity of LR I=4 MW/cm2 creation of nanometer size structure begins. A graded band gap structure with optical window was formed at the top of nano-hills.

Słowa kluczowe

EN

self-organizing structure; Nd:YAG laser; CdZnTe crystal

• Wydawca: Łukasiewicz Industrial Research Institute for Automation and Measurements PIAP
• Czasopismo: Journal of Automation Mobile Robotics and Intelligent Systems
• Rocznik: 2009
• Tom: Vol. 3, No. 4
• Strony: 127--129
• Opis fizyczny: Bibliogr. 15 poz., rys.

Twórcy

autor

Medvid' A.

autor

Mychko A.

autor

Gnatyuk V. A.

autor

Levytskyi S.

autor

Naseka Y.

• Riga Technical University, Riga, 14 Azenes Str., LV-1048, Latvia,

Bibliografia

• [1] Belogorokhov A.I., Lakeenkov V.M., Belogorokhova L.I., “Optical properties of Cd Zn Te (0< <0.1) single crystals in the infrared spectral region“,Semiconductors, vol. 35, no. 7, 2001, pp. 773-776.
• [2] Johnson S.M., Kalisher M.H., Ahlgren W.L., James J.B., Cockrum C.A, „HgCdTe 128×128 infrared focal plane arrays on alternative substrates of CdZnTe/GaAs/Si”, Appl. Phys. Lett., vol. 56, no.10, 1990, pp. 946-948.
• [3] Schlesinger T.E., Toney I.E., , „Cadmium zinc telluride and its use as a nuclear radiation detector material”,Materials Science and Engineering, vol. 32, 2001, pp. 103-189.
• [4] Squillante R., Entine G., Frederick E., , „Development of two new M--n CdTe sensor”,Nucl. Instr. and Meth. A., vol. 283,1989, pp. 323-329.
• [5] Redus R.,. Squillante M.R, „Electronics for high resolution spectroscopy with compound semiconductors”,J. Lund. Ibid., vol. 380,1996, pp. 312-317.
• [6] Patt B.E., Iwanczyk J.S., Vilkelis G., . „New Y-ray detector structures for electron only charge collection utilizing high-Z compound semiconductors”, J. Nucl. Instr. and Meth. A., vol. 380, 1996, pp. 276-281.
• [7] Chapuis C., Durouchoux P., „The electrical segmention of Ge detectors as an impruvement imiging capabilities in the hard X-ray and gamma-ray range” Nuclear Ins-truments and Methods in Physics Research Section A, vol. 387, 1997, pp. 259-263.
• [8] Medvid' A., Hatanaka Y., Korbutjak D., Fedorenko L., Krilyuk S., Snitka V., „Generation of the A-centers at the surface of CdTe(Cl) by YAG:Nd laser radiation”, Appl. Sur. Science, vol. 197-198, issue 1-2, 2002, pp. 124-129.
• [9] Bell R.O., Toulermonde M., Siffert P., “Calculated temperature distribution during laser annealing in silicon and cadmium telluride”,Appl. Phys. A., vol. 19, no. 3,1979, pp. 313-319.
• [10] Ahmatov A., Emel'yanov V.I., “Powerful laser interaction at semiconductors and metals surface: nonlinear optical effect and nonlinear optical diagnostic”,Physics-Uspekhi., vol.147, no. 4, 1985, pp. 675-745.
• [11] Tauc J.,Photo- and Thermoelectrical Phenomena in Semiconductors, Moscow, IL, 1962.
• [12] Reno J., Jones E., „Determination of the dependence of the band-gap energy on compozition CdZnTe”,Physical Review B, vol. 45, no. 3, 1992, pp. 1440-1442.
• [13] Medvid' A., Fedorenko L., Korbutjak B., Kryluk S., Yusupov M., Mychko A., “Modification of band-gap in surface layer of CdZnTe by YAG:Nd laser radiation”. In: Proceeding of SPIE 5 International Conference “Advanced optical materials and devices, vol. 1-5, 2007, 65961A.
• [14] Physicochemical properties of semiconductor materials , Academic press: Moscow, 1979.
• [15] Medvid' A., Fedorenko L., Korbutjak B., Kryluk S., Yusupov M., Mychko A., “Formation of grated band-gap in CdZnTe by YAG:Nd laser radiation”,Radiation Measurements, vol. 42, 2007, pp. 701-703.