Growth and properties of ZnO films grown using pa-movpe with DMZn and N2O

• Autorzy: Nakano T. , Nishimoto K. , Sumiya M. , Fuke S.
• Konferencja: 8th International Conference on Global Research and Education – Inter-Academia 2009
• Języki publikacji: EN

Abstrakty

EN

ZnO films were grown by plasma-assisted metal organic vapor phase epitaxy (PA-MOVPE) using dimethylzinc (DMZn) and N O gases. The crystallinity and surface morphology of ZnO films were investigated using X-ray diffraction (XRD) and scanning electron microscopy (SEM), respectively. The crystallinity of ZnO improved (a) when the N2O flow rate was increased, because vapor phase reaction was suppressed while surface migration was enhanced, and (b) when the growth temperature was increased, because surface diffusion was enhanced. In the PA-MOVPE method with N2O gases and DMZn, both the N2O flow rate and crystal growth temperature strongly affected the crystallinity of ZnO films.

Słowa kluczowe

EN

ZnO; PA-MOVPE; epitaxial growth; DMZn; N2O; temperature modulation growth

• Wydawca: Łukasiewicz Industrial Research Institute for Automation and Measurements PIAP
• Czasopismo: Journal of Automation Mobile Robotics and Intelligent Systems
• Rocznik: 2009
• Tom: Vol. 3, No. 4
• Strony: 124--126
• Opis fizyczny: Bibliogr. 9 poz., rys.

Twórcy

autor

Nakano T.

autor

Nishimoto K.

autor

Sumiya M.

autor

Fuke S.

• Department of Electrical and Electronic Engineering, Faculty of Engineering, Shizuoka University, 3-5-1 Johoku Naka-ku Hamamatsu, 432-8561, Japan,

Bibliografia

• [1] Nakamura S., Mukai T., Senoh M. Iwasa N.,Journal of Applied Physics , no. 76, 1994, 8189.
• [2] Tang Z.K., Wang G.K.L., Yu P., Appl. Phys. Lett., no. 72, 1998, 3270.
• [3] Krupanidhi S.B., Sayer M., J. Appl. Phys., no. 56, 1984, 3308.
• [4] Zhamg D.H., Brodie D.E., Thin Solid Films, no. 238,1994, 95.
• [5] Fujimoto E., Sumiya M., Ohnishi T., Watanabe K., Lippmaa M., Matsumoto Y., Koinuma H.,Appl. Phys. Express , no. 2, 2009, 045502.
• [6] Minegishi K., Koiwai Y., Kikuchi Y., Yano K., Kasuga M., Shimizu A., Jpn. J. Appl. Phys., no. 36, 1997, p. 1453 f.
• [7] Segawa Y., Ohtomo A., M. Koinuma M., Z.K. Tang, P. Yu, and GK.L. Wong,Phys. Stat. Sol. B , no. 202, (1997) 669.
• [8] Ryu Y.R., Zhu S., Budai J.D., Chandrasekhar H.R., Miceli P.F., White H.W., Appl. Phys. Lett., no. 88, 2000, p. 20 f.
• [9] Tsukazaki A., Onuma T., Ohtani M., Makino S., Sumiya M., Ohtani K., Chichibu S.F., Fuke S., Segawa Y., Ohno H., Koinuma H., Kawasaki M.,Nature Material, no. 4, 2004, 42.