Overhauser effect and anisotropy of electron spin g-factor in GaAs / AlGaAs quantum wells

• Autorzy: Ito T. , Shichi W. , Ichida M. , Gotoh H. , Kamada H. , Ando H.
• Konferencja: 8th International Conference on Global Research and Education – Inter-Academia 2009
• Języki publikacji: EN

Abstrakty

EN

To investigate the dependence of electron g-factor on magnetic field in GaAs / AlGaAs quantum wells time-resolved photoluminescence measurements under a high magnetic field in different experimental configuration, the magnetic field perpendicular (g up tack ) and parallel (g II) to the quantum confinement direction, has been studied. When the angle between the magnetic field and the confinement direction is 45°, the precession frequency varies depending on polarity of magnetic field and the circular polarization type of excitation light (sigma+ or sigma-). We found that these dependences of the precession frequency exhibit main features of Overhauser effect with an effective magnetic field of 0.5 T that nuclear spins react back on electron spin precession and the g-factor value is not affected by the effective magnetic field. The g+ and gii values agree well with the results of four-band k • p perturbation calculations.

Słowa kluczowe

EN

quantum well; electron spin g-factor; Overhouser effect

• Wydawca: Łukasiewicz Industrial Research Institute for Automation and Measurements PIAP
• Czasopismo: Journal of Automation Mobile Robotics and Intelligent Systems
• Rocznik: 2009
• Tom: Vol. 3, No. 4
• Strony: 105--107
• Opis fizyczny: Bibliogr. 5 poz., rys.

Twórcy

autor

Ito T.

autor

Shichi W.

autor

Ichida M.

autor

Gotoh H.

autor

Kamada H.

autor

Ando H.

• Division of Global Research Leaders, Shizuoka University, 3-5-1 Johoku Naka-ku Hamamatsu 432-8561,

Bibliografia

• [1] Snelling M.J., Blackwood E., McDonagh C.J., Harley R.T., Foxon C.T.B., “Exciton, Heavy-hole, and electron g factors in type-I GaAs/AlxGa1-xAs quantum wells”,Phys. Rev. B, vol. 45, no. 7, 1992, pp. 3922-3925.
• [2] Hannak R.M., Oestreich M., Heberle A.P., Ruhle W.W., Kohler K., “Electron g factor in quantum wells determined by spin quantum beats”, Solid State Commun., vol. 93, no. 4, 1995, pp. 313-317.
• [3] Malinowski A., Harley R.T., “Anisotoropy of the electron g factor in lattice-mached and strained-layer III-V quantum wells”, Phys. Rev. B, vol. 62, no. 3, 2000, pp. 2051-2056.
• [4] Salis G., Fuchs D.T., Kikkawa J.M., Awschalom D.D., Ohno Y., Ohno H., “Optical manipulation of nuclear spin by a two-dimensional electron gas”, Phys. Rev. Lett. , vol. 86, no. 12, 2001, pp. 2677-2680.
• [5] Ito T., Shichi W., Morisada S., Ichida M., Gotoh H., Kamada, Ando H., “Quantum confinement effects on electron spin g-factor in semiconductor quantum well structures”, Phys. Stat. Sol. C, vol. 3, no. 10, 2006, pp. 3496-3499.
• [6] Ivchenko E.L., Kiselev A.A., “Electron g factor of quantum wells and superlattices”, Sov. Phys. Semicond., vol. 26, no. 8, 1992, pp. 827-831.
• [7] Ito T., Shichi W., Nishioka Y., Ichida M., Gotoh H., Kamada H., Ando H., “Dependence of electron spin gfactor on magnetic field in quantum wells”, J. Limin., vol. 128, no. 5-6, 2008, pp. 865-867.
• [8] Kosaka H., Kiselev A.A., Baron F.A., Kim K.W., Yablonovichi E., “Electron g factor engineering in III-V semiconductors for quantumcommunications”,Electron. Lett., vol. 37, no. 7, 2001, pp. 464-465.