Nanohills in SiGe/Si structure formed by laser radiation

• Autorzy: Medvid' A. , Onufrijev P. , Lyutovich K. , Oehme M. , Kasper E. , Dmitruk I. , Pundyk I. , Manak I. , Grabovskis D.
• Konferencja: 8th International Conference on Global Research and Education – Inter-Academia 2009
• Języki publikacji: EN

Abstrakty

EN

Formation of self-assembling nanohills induced by irradiation of nanosecond Nd:YAG laser pulses on the Si0.7Ge0.3/Si hetero-epitaxial structures is reported. The atomic force microscope study of the irradiated surface morphology has shown a start of nanohills formation after laser irradiation of the intensity I=7.0 MW/cm2. The giant "blue shift" of photoluminescence spectra with maximum intensity in region of 700-800 nm (1.76 - 1.54 eV) is explained by the Quantum confinement effect in the nanohills. The maximum of this photoluminescence band slightly shifts to shorter wavelengths with the increase of the intensity of laser pulses used for sample treatment. Appearance of the 300 cm-1 Ge-Ge vibration band in Raman scattering spectra for sample irradiated with I=20.0MW/cm2 is explained by Ge phase formation. Formation of the Ge-rich phase is explained by localization of Ge atoms drifting toward the irradiated surface under the thermal gradient due to strong absorption of laser radiation.

Słowa kluczowe

EN

nanohills; SiGe; laser; hetero-epitaxial structure

• Wydawca: Łukasiewicz Industrial Research Institute for Automation and Measurements PIAP
• Czasopismo: Journal of Automation Mobile Robotics and Intelligent Systems
• Rocznik: 2009
• Tom: Vol. 3, No. 4
• Strony: 62--64
• Opis fizyczny: Bibliogr. 11 poz., rys.

Twórcy

autor

Medvid' A.

autor

Onufrijev P.

autor

Lyutovich K.

autor

Oehme M.

autor

Kasper E.

autor

Dmitruk I.

autor

Pundyk I.

autor

Manak I.

autor

Grabovskis D.

• Riga Technical University, 14 Azenes Str., Riga, LV-1048, Latvia; Institute of Semiconductor Physics National Academy of Science of Ukraine, 45 Pr. Nauki, 252650, Kyiv-28, Ukraine,

Bibliografia

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