Multi-scale simulation of hybrid silicon nano-electromechanical (NEM) information systems

• Autorzy: Mizuta H. , Ramirez M. A. G. , Tsuchiya Y. , Nagami T. , Sawai S. , Oda S. , Okamoto M.
• Konferencja: 8th International Conference on Global Research and Education – Inter-Academia 2009
• Języki publikacji: EN

Abstrakty

EN

This paper presents emerging NEM hybrid systems for advanced information processing and describes our recent attempts of developing new multi-physics simulation technologies for these NEM systems at micro-, nano- and atomscales.

Słowa kluczowe

EN

multi-scale simulation; NEMS; suspended gate; non-volatile memory; phonon

• Wydawca: Łukasiewicz Industrial Research Institute for Automation and Measurements PIAP
• Czasopismo: Journal of Automation Mobile Robotics and Intelligent Systems
• Rocznik: 2009
• Tom: Vol. 3, No. 4
• Strony: 58--61
• Opis fizyczny: Bibliogr. 7 poz., rys.

Twórcy

autor

Mizuta H.

autor

Ramirez M. A. G.

autor

Tsuchiya Y.

autor

Nagami T.

autor

Sawai S.

autor

Oda S.

autor

Okamoto M.

• NANO Group, School of Electronics and Computer Science, University of Southampton, UK, and SORST JST (Japan Science and Technology),

Bibliografia

• [1] Tsuchiya Y., et al., “Nanoelectromechanical nonvolatile memory device incorporating nanocrystalline Si dots,”J. Appl. Phys., issue 100, 2006, 094306.
• [2] Nagami T., : “Three-dimensional numerical analysis of switching properties of high-speed and non-volatile nano-electro-mechanical memory,”IEEE Trans. Electron Devices, issue 54, 2007, 1132.
• [3] Ramirez, M.A.G., et al., “Suspended gate silicon nanodot memory”, ESSDERC/CIRC Fringe, Edinburgh, 2008, 19.
• [4] Ramirez, M.A.G.,et al. Hybrid circuit analysis of a suspended-gate silicon nanodot memory (SGSNM) cell”, to be published at MNE2009, Ghent, 2009.
• [5] Pruvost B., , “Design optimization of NEMS switches for suspended-gate single-electron transistor applications”,IEEE Trans. Nanotechnology, no. 8, 2009, pp. 174-184.
• [6] Mori N., et al., “Quasi-ballistic electron transport through silicon nanocrystals”, to be published at EDISON 16, Montpellier, 2009.
• [7] Sawai S., et al., “Atomistic study of phonon states in hydrogen-terminated Si ultra-thin films”,IEEE Silicon Nanoelectronics Workshop, Honolulu, 2008, M0200.