Single-electron transport characteristics in quantum dot arrays due to ionized dopants

• Autorzy: Moraru D. , Ligowski M. , Tarido J. C. , Miki S. , Nakamura R. , Yokoi K. , Mizuno T. , Tabe M.
• Konferencja: 8th International Conference on Global Research and Education – Inter-Academia 2009
• Języki publikacji: EN

Abstrakty

EN

Single charge manipulation for useful electronic functionalities has become an exciting and fast-paced direction of research in recent years. In structures with dimensions below about 100 nm, the physics governing the device operation turn out to be strikingly different than in the case of larger devices. The presence of even a single charge may completely suppress current flow due to the basic electronelectron repulsion (so called Coulomb blockade effect) [1]. It is even more exciting to control this effect at the level of single-electron/single-atom interaction. The atomic entity can be one donor present in silicon lattice with a Coulombic potential well. In principle, it can accommodate basically a single electron. We study the electrical behavior of nanoscale-channel silicon-on-insulator field-effect transistors (SOI-FETs) that contain a discrete arrangement of donors. The donors can be utilized as "stepping stones" for the transfer of single charges. This ability opens the doors to a rich world of applications based on the simple interplay of single charges and single atoms, while still utilizing mostly conventional and well established fabrication techniques. In this work, we distinguish the effects of single-electron transport mediated by one or few dopants only. Furthermore, we show how the single-electron/single-donor interaction can be tuned by using the external biases. We demonstrate then by simulation and experiment the feasibility of single-electron/bit transfer operation (single-electron turnstile).

Słowa kluczowe

EN

single dopant; silicon nanowire; single-electron transport; single-electron transfer

• Wydawca: Łukasiewicz Industrial Research Institute for Automation and Measurements PIAP
• Czasopismo: Journal of Automation Mobile Robotics and Intelligent Systems
• Rocznik: 2009
• Tom: Vol. 3, No. 4
• Strony: 52--54
• Opis fizyczny: Bibliogr. 8 poz., rys.

Twórcy

autor

Moraru D.

autor

Ligowski M.

autor

Tarido J. C.

autor

Miki S.

autor

Nakamura R.

autor

Yokoi K.

autor

Mizuno T.

autor

Tabe M.

• Shizuoka University, Research Institute of Electronics, Johoku 3-5-1, 432-8011 Hamamatsu, Japan,

Bibliografia

• [1] Averin D.V., Likharev K.K., in “Single charge tunneling ”, ed. H. Grabert and M. Devoret, Plenum, New York, 1992, p. 311.
• [2] Geerligs L.J., , “Frequency-locked turnstile device for single electrons”, Phys. Rev. Lett., vol. 64, no. 22, 1990, pp. 2691-2694.
• [3] Kohn W., Luttinger J.M., “Theory of donor states in silicon”, Phys. Rev., vol. 98, no. 4, 1955, pp. 915-922.
• [4] Yokoi K.K., Moraru D., Ligowski M., Tabe M., “Single-gated single-electron transfer in nonuniform arrays of quantum dots”, Jpn. J. Appl. Phys., vol. 48, 2009, pp. 024503.
• [5] Moraru D., Ono Y., Inokawa H., Tabe M., “Quantized electron transfer through random multiple tunnel junctions in phosphorus-doped silicon nanowires”, Phys.Rev. B, vol. 76, no. 7, 2007, pp. 075332.
• [6] Moraru D., Ligowski M., Yokoi K., Mizuno T., Tabe M.,“Single-electron transfer by inter-dopant coupling tuning in doped nanowire silicon-on-insulator field-effect transistors”, Appl. Phys. Exp., vol. 2, 2009, pp. 071201.
• [7] Ligowski M., Moraru D., Anwar M., Mizuno T., Jablonski R., Tabe M., “Observation of individual dopants in a thin silicon layer by low temperature Kelvin probe force microscope”, Appl. Phys. Lett., vol. 93, no. 14, 2008, pp. 142101.
• [8] Tabe M., Nuryadi R., Moraru D., Burhanudin Z.A., Yokoi K., Ikeda H., “Si multidot FETs for single-electron transfer and single-photon detection”, Acta Physica Pol., vol. 113, no. 3, pp. 811-814.