Dynamics of laser-induced melting and modification of the surface of semiconductors by nanosecond laser pulses

• Autorzy: Gnatyuk V. , Aoki T. , Vlasenko O. , Gorodnychenko O.
• Konferencja: 8th International Conference on Global Research and Education – Inter-Academia 2009
• Języki publikacji: EN

Abstrakty

EN

In situ detection and dynamics of laser-induced melting in different semiconductor crystals (CdTe, CdHgTe, GaAs, InSb and SiC) were performed by the time-resolved reflectivity (TRR). The samples were subjected to irradiation with 20 ns pulses of KrF excimer or ruby laser with energy density varied in a wide range. The surface morphology of the crystals was monitored using optical microscopy and time dependences of the temperature of the crystal surface as a function of laser pulse energy density was also calculated. The melting and ablation threshold values were determined and specific features of the laser-induced phase transitions in the surface region of the semiconductors were analyzed.

Słowa kluczowe

EN

semiconductors; laser irradiation; time-resolved reflectivity; melting threshold

• Wydawca: Łukasiewicz Industrial Research Institute for Automation and Measurements PIAP
• Czasopismo: Journal of Automation Mobile Robotics and Intelligent Systems
• Rocznik: 2009
• Tom: Vol. 3, No. 4
• Strony: 33--36
• Opis fizyczny: Bibliogr. 14 poz., rys.

Twórcy

autor

Gnatyuk V.

autor

Aoki T.

autor

Vlasenko O.

autor

Gorodnychenko O.

• V.E. Lashkaryov Institute of Semiconductor Physics of National Academy of Sciences of Ukraine, Prosekt Nauky 41, Kyiv 03028, Ukraine, and Research Institute of Electronics, Shizuoka University, 3-5-1 Johoku, Naka-ku, Hamamatsu 432-8011, Japan,

Bibliografia

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• [14] Baidullaeva A., Vlasenko A.I., Gatskevich E.I., Gnatyuk V.A., Ivlev G.D., Mozol’ P.E. Nanosystems, Nanomaterials, Nanotechnologies, vol. 6, no 4, 2008, pp. 1167-1174. (in Russian)