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Computer Simulation of Processes Connected with Electron Donor Fluorescence Quenching in Rigid Matrices. Effect of an External Electric Field

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Warianty tytułu
Języki publikacji
EN
Abstrakty
EN
Computer simulation of photoexcited electron-donor D* fluorescence quenching in a rigid matrix has been performed. Three processes are assumed to occur: (1) the natural decay of D* excitation, (2) the electron transfer from D* to acceptor A, (3) migration of the excitation energy among D molecules. The effect of an external electric field F on process (2) has been included into considerations. Fluorescence decay curves calculated for various concentrations of D and the field-induced variation in the donor fluorescence intensity have been compared with respective experimental data and the results obtained from the approximate analytical calculations (hop ping model).
Rocznik
Strony
2245--2253
Opis fizyczny
Bibliogr. 41 poz., rys.
Twórcy
autor
autor
  • Institute of Applied Radiation Chemistry, Technical University of Łódź, Wróblewskiego 15, 93-590 Łódź, Poland, m.hilczer@mitr.p.lodz.pl
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Typ dokumentu
Bibliografia
Identyfikator YADDA
bwmeta1.element.baztech-article-BUJ6-0025-0023
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