GaN - "High Pressure Semiconductor" in Modern Physics and Technology

• Autorzy: Grzegory I. , Porowski S.
• Języki publikacji: EN

Abstrakty

EN

Due to the strong binding energy of nitrogen molecule, GaN is unstable at high temperatures in relation to its constituents. Consequently, high temperature crystallization methods which are necessary for high quality bulk single crystals, require high pressures. GaN and its ternaries with In and Al form a foundation for the fast est growing sectors of semiconductor technology, such as short wave length optoelectronics and high-power high-frequency electronics. In this paper crystallization, physical properties and applications of GaN single crystals are discussed, with a special focus on the results coming from the Institute of High Pressure Physics of Polish Academy of Sciences.

Słowa kluczowe

EN

III-V compounds; gallium nitride; crystallization from solution; high pressure synthesis

• Wydawca: Polskie Towarzystwo Chemiczne
• Czasopismo: Polish Journal of Chemistry
• Rocznik: 2008
• Tom: Vol. 82, nr 10
• Strony: 1869--1890
• Opis fizyczny: Bibliogr. 36 poz., rys.

Twórcy

autor

Grzegory I.

autor

Porowski S.

• Institute of High Pressure Physics, Polish Academy of Sciences, Sokołowska 29, 01-142 Warsaw, Poland,

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