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Due to the strong binding energy of nitrogen molecule, GaN is unstable at high temperatures in relation to its constituents. Consequently, high temperature crystallization methods which are necessary for high quality bulk single crystals, require high pressures. GaN and its ternaries with In and Al form a foundation for the fast est growing sectors of semiconductor technology, such as short wave length optoelectronics and high-power high-frequency electronics. In this paper crystallization, physical properties and applications of GaN single crystals are discussed, with a special focus on the results coming from the Institute of High Pressure Physics of Polish Academy of Sciences.
Wydawca
Czasopismo
Rocznik
Tom
Strony
1869--1890
Opis fizyczny
Bibliogr. 36 poz., rys.
Twórcy
autor
autor
- Institute of High Pressure Physics, Polish Academy of Sciences, Sokołowska 29, 01-142 Warsaw, Poland, izabella@unipress.waw.pl
Bibliografia
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Bibliografia
Identyfikator YADDA
bwmeta1.element.baztech-article-BUJ6-0024-0145