Damage distributions in GaAs single crystal irradiated with 84Kr (394 MeV), 209Bi (710 MeV) and 238U (1300 MeV) swift ions

• Autorzy: Didyk A. Y. , Komarov F. F. , Vlasukova L. A. , Gracheva E. A. , Hofman A. , Yuvchenko V. N. , Wiśniewski R. , Wilczyńska T.
• Języki publikacji: EN

Abstrakty

EN

We are presenting a study of damage distribution in GaAs irradiated with 84Kr ions of energy EKr = 394 MeV up to the fluence of 5 × 1012 ion/cm-2. The distribution of damage along the projected range of 84Kr ions in GaAs was investigated using selective chemical etching of a single crystal cleaved perpendicularly to the irradiated surface. The damage zone located under the Bragg peak of 84Kr ions was observed. Explanation of the observed effects based on possible processes of channeling of knocked target atoms (Ga and As) is proposed.

Słowa kluczowe

EN

semiconductors; gallium arsenide; swift heavy ions; inelastic energy loss; atomic force microscopy (AFM)

• Wydawca: Institute of Nuclear Chemistry and Technology
• Czasopismo: Nukleonika
• Rocznik: 2008
• Tom: Vol. 53, No. 2
• Strony: 77--82
• Opis fizyczny: Bibliogr. 20 poz., rys.

Twórcy

autor

Didyk A. Y.

autor

Komarov F. F.

autor

Vlasukova L. A.

autor

Gracheva E. A.

autor

Hofman A.

autor

Yuvchenko V. N.

autor

Wiśniewski R.

autor

Wilczyńska T.

• Flerov Laboratory of Nuclear Reaction, Joint Institute of Nuclear Research, 6 Joliot-Curie Str., 141980 Dubna, Russia, Tel.: [phone], Fax: [phone],

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