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Ion implantation followed by laser/pulsed plasma/ion beam annealing : a new approach to fabrication of superconducting MgB2 thin films

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Warianty tytułu
Języki publikacji
EN
Abstrakty
EN
The paper presents a new approach to formation of superconducting MgB2 thin films: ion implantation followed by annealing in an unconventional second step treatment using pulsed laser, plasma, or ion beams. Merits and drawbacks of individual approaches are discussed.
Słowa kluczowe
Czasopismo
Rocznik
Strony
7--10
Opis fizyczny
Bibliogr. 16 poz., rys.
Twórcy
autor
autor
autor
autor
  • Department of Material Studies, The Andrzej Sołtan Institute for Nuclear Studies, 05-400 Otwock/Świerk, Poland and Institute of Nuclear Chemistry and Technology, 16 Dorodna Str., 03-145 Warsaw, Poland
Bibliografia
  • 1 Allmen M (1987) Laser-beam interactions with materials,physical principles and applications. Springer-Verlag,Berlin, p 17
  • 2. Appleton BR, White CW, Stritzker B, Meyer O (1980)Laser annealing of superconductors. In: White CW,Peercy PS (eds) Laser and electron beam processing of materials. Academic Press, New York, p 714
  • 3. Davis HA, Wood BP, Munson CP et al. (1998) Ion beam and plasma technology development for surface modification at Los Alamos National Laboratory. Mater Chem Phys 54:213–218
  • 4. Hodgson RT, Baglin JEE, Pal R, Neri JM, Hammer DA (1980) Ion beam annealing of semiconductors. Appl Phys Lett 37;2:187–189
  • 5. Liu ZK, Schlom DG, Li Qi, Xi XX (2001) Thermodynamics of the Mg-B system: Implications for the deposition of MgB2 thin films. Appl Phys Lett 78:3678–3681
  • 6. Nagamatsu J, Nakagawa N, Muranaka T, Zenitani Y,Akimitsu J (2001) Superconductivity at 39 K in magnesium diboride. Nature 410:63–65
  • 7. Peng N, Jeynes Ch, William RM et al. (2005) A potential integrated low temperature approach for superconducting MgB2 thin film growth and electronics device fabrication by ion implantation. IEEE Trans Appl Supercond 15;2/3:3265–3268
  • 8. Piekoszewski J, Kempiński W, Andrzejewski B et al. (2005) Superconductivity of MgB2 thin films prepared by ion implantation and pulsed plasma treatment. Vacuum 78:123–129
  • 9. Piekoszewski J, Langner L (1991) High intensity pulsed ion beams in material processing: equipment and applications. Nucl Instrum Methods B 53:148–160
  • 10. Piekoszewski J, Werner Z, Szymczyk W (2001) Application of high intensity pulsed ion and plasma beams in modification of materials. Vacuum 63:475–481
  • 11. Qian M (2006) Creation of semisolid slurries containing fine and spherical particles by grain refinement based on the Mullins-Sekerka stability criterion. Acta Mater 54:2241–2252
  • 12. SIMNRA code, http://www.rzg.mpg.de/~mam/
  • 13. Simon F, Brune J, Herbst L (2006) Advanced excimerbased crystallization systems for production solutions. Appl Surf Sci 252:4402–4405
  • 14. SRIM 2006 code, http://www/srim/org
  • 15. Szyszko W, Vega F, Afonso CN (1995) Shifting of the thermal properties of amorphous germanium films upon relaxation and crystallization. Appl Phys A 61:141–147
  • 16. Werner Z, Piekoszewski J, Szymczyk W (2001) Generation of high-intensity pulsed ion and plasma beams for material processing. Vacuum 63:701–708
Typ dokumentu
Bibliografia
Identyfikator YADDA
bwmeta1.element.baztech-article-BUJ6-0023-0014
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