Recent Photothermal and Photoacoustic Investigations in A.F.Ioffe Physical - Technical Institute o Ras

• Autorzy: Muratikov K. , Glazov A.
• Języki publikacji: EN

Abstrakty

EN

Photoacoustic investigations of phase transitions in thin semiconductor films are presented. It is shown that the photoacoustic method can be used for phase transition temperature and latent heat measurements in thin semiconductor films. Some applications of the photothermal methods for characterization of ion implanted and high-energy proton irradiated serruconductors are described. The optical models of subgap laser light interaction with ,on implanted and high-energy proton irradiated serruconductors are proposed. The wave optics model of the photodeflection ("mirage") effect is given. On the base of this model the limitations on the results of the ordinary geometric optics model of the photodeflection method applications to the quantitative measurements of thermal parameters of volume materials and thin films are determined.The modern results of residual, stresses investigations in solid objects by photothermal, and photoacoustic methods are presented.

• Wydawca: Silesian Division of Polish Acoustical Society
• Czasopismo: Molecular and Quantum Acoustics
• Rocznik: 2000
• Tom: Vol. 21
• Strony: 179--189
• Opis fizyczny: Bibliogr. 38 poz., rys.

Twórcy

autor

Muratikov K.

autor

Glazov A.

• A.F.Ioffe Physical-Technical Institute of RAS, Polytekhnicheskaya 26 194021 St.Petersburg, Russia,