Angular dependence of post-implantation damage recovery under 1 MeV electron irradiation in GaAs

• Autorzy: Warchoł S. , Rzewuski H. , Krynicki J. , Grotzschel R.
• Języki publikacji: EN

Abstrakty

EN

The angular dependence of post-implantation defects removal in GaAs irradiated with 1 MeV electrons from a Van de Graaff accelerator has been investigated. The possible way of enhancing defect annealing consists in ionization created by electron irradiation. In this paper new results of a damage level behaviour dependent on 1 MeV electron beam angle irradiation are presented. GaAs single crystals of <100> orientation were implanted with 150 keV As+ ions at RT and then irradiated with a scanning beam of 1 MeV electrons at some selected angles. Rutheford Backscattering Spectroscopy (RBS) of 1.7 MeV 4He+ ions were used to determine the depth distribution of defect concentration before and after electron irradiation. The results relate clearly the ionization intensity created by the electron beam with angle of incidence with respect to the GaAs <100> orientation.

Słowa kluczowe

EN

electron annealing; GaAs; implantation

• Wydawca: Institute of Nuclear Chemistry and Technology
• Czasopismo: Nukleonika
• Rocznik: 2002
• Tom: Vol. 47, nr 1
• Strony: 19--21
• Opis fizyczny: Bibliogr. 15 poz., rys.

Twórcy

autor

Warchoł S.

• Institute of Nuclear Chemistry and Technology, 16 Dorodna Str., 03-195 Warsaw, Poland, Tel.: [phone], Fax: [phone]

autor

Rzewuski H.

• Institute of Nuclear Chemistry and Technology, 16 Dorodna Str., 03-195 Warsaw, Poland, Tel.: [phone], Fax: [phone]

autor

Krynicki J.

• Institute of Nuclear Chemistry and Technology, 16 Dorodna Str., 03-195 Warsaw, Poland, Tel.: [phone], Fax: [phone]

autor

Grotzschel R.

• Forschungszentrum Rossendorf e.V., Postfach 510119 (40/2) 01314 Dresden, Germany

Bibliografia

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