Surface structure changes of InP and GaAs single crystals irradiated with high energy electrons and swift heavy ions

• Autorzy: Didyk A. , Komarov F. , Vlasukova L. , Yuvchenko V. , Hofman A.
• Języki publikacji: EN

Abstrakty

EN

InP and GaAs crystal structure changes under the influence of swift Kr and Bi ions have been studied by means of scanning electron microscopy, atomic force microscopy and selective chemical etching. The previous disordering of samples by electron irradiation has shown to lead to macrodefect formation in the form of cracks and breaks, at the depths near the ion end-of-range, and on the crystal surface. A possible explanation of the observed effects is proposed.

Słowa kluczowe

EN

InP crystals; GaAs crystals; preliminary disorder; swift ion irradiation; surface topography; macrodefect

• Wydawca: Institute of Nuclear Chemistry and Technology
• Czasopismo: Nukleonika
• Rocznik: 2006
• Tom: Vol. 51, nr 2
• Strony: 105--109
• Opis fizyczny: Bibliogr. 13 poz., rys.

Twórcy

autor

Didyk A.

autor

Komarov F.

autor

Vlasukova L.

autor

Yuvchenko V.

autor

Hofman A.

• Joint Institute for Nuclear Research, FLNR, 6 Joliot-Curie Str., 141980 Dubna, Moscow Region, Russia, Tel.: [phone], Fax: [phone],

Bibliografia

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