The Quasi-ternary CdSe–Ga2Se3–Sb2Se3 System

• Autorzy: Sosovska S. , Olekseyuk I. , Parasyuk O.
• Języki publikacji: EN

Abstrakty

EN

Differential thermal analysis, X-ray diffraction, and metallography were used to study the interaction between the components of the quasi-ternary CdSe–Ga2Se3–Sb2Se3 system. Phase diagrams of three vertical sections, an isothermal section at 670K, aswell as a projection of the liquidus surface have been constructed. The type of mono- and invariant processes in the system has been investigated and the coordinates of invariant points have been determined. Present results can be employed for the growth of CdGa2Se4 single crystals from non-stoichiometric melts.

Słowa kluczowe

EN

chalcogenide; phase diagram; isothermal section; liquidus surface

• Wydawca: Polskie Towarzystwo Chemiczne
• Czasopismo: Polish Journal of Chemistry
• Rocznik: 2007
• Tom: Vol. 81, nr 4
• Strony: 505--513
• Opis fizyczny: Bibliogr. 16 poz., rys.

Twórcy

autor

Sosovska S.

autor

Olekseyuk I.

autor

Parasyuk O.

• Department of General and Inorganic Chemistry, Volyn State University, Voli Ave 13, 43009 Lutsk, Ukraine,

Bibliografia

• 1. Kraemer V., Siebert D. and Febravo S., Z. Kristallogr., 169, 283 (1984).
• 2. AbdullaeY G.B., Agaev V.G., Antonov V.B., Nani R.Kh. and Salaev E.Yu., Physics and Technique of Semiconductors, 5 (11), 2132 (1971), (in Russian).
• 3. Derid Y.O., Radautsan S.I. and Tiginyanu I.M., Shtiintsa, Kishinev, (1990) (in Russian).
• 4. Sosovska S.M., Olekseyuk I.D. and Parasyuk O.V., VII All-Ukrainian Conf. Stud. and Post-grad. Stud.,Kyiv, 67 (2006) (in Ukrainian).
• 5. Sosovska S.M., Yurchenko O.M., Romanyuk V.E., Olekseyuk I.D. and Parasyuk O.V., J. Alloys Comp.,417,127(2006).
• 6. Sosovska S.M., Yurchenko O.M., Romanyuk V.E., Olekseyuk I.D. and Parasyuk O.V., Proc. SPIE (in press).
• 7. Olekseyuk I.D. and Parasyuk O.V., Zh. Neorg. Khim., 40, 315 (1995).
• 8. Piskach L.V., Parasyuk O.V., Olekseyuk I.D. and Galagan V.Y, Phys. Chem. Sol. State, 3, 63 (2002).
• 9. Massalski T.B. (Ed),Amer. Soc. For Met., l, 685, 1161, 3300 (1985).
• 10. Reeber R.R., J. Mater. Sci., 590 (1976).
• 11. Hamilton P.H., Semicond. Prod. Sol. State Technol., 7(6), 15 (1964).
• 12. Sosovska S.M., Gurska O.V., Piskach L.V. and Parasyuk O.V., Nauk. Visnyk of Volyn State Univ., 4, 66 (2006) (in Russian).
• 13. Loireau-Lozach A.M., Guittard M. and Flahaut J., Mat. Res. Bull., 20,443 (1985).
• 14. Sosovska S.M., Olekseyuk I.D. and Parasyuk O.V., J. Alloys Comp. (in press).
• 15. Novoselova A.V., Sher A.A. and Odin I.N., Zh. Neorg. Khim., 23 (12), 3321 (1978).
• 16. Sosovska S.M., Yurchenko O.M., Olekseyuk I.D. and Parasyuk O.V., IX Inter. Conf. Cryst. Chem. of Intermet. Compds, Lviv, 59 (2005).