Post-implantation defects instability under 1 MeV electron irradiation in GaAs

• Autorzy: Warchoł S. , Rzewuski H. , Krynicki J. , Grötzschel R.
• Języki publikacji: EN

Abstrakty

EN

The influence of 1 MeV electron irradiation on the stability of post-implantation defects in GaAs has been investigated. The n-type GaAs wafers of <100> orientation were implanted with 150 keV As+ ions below the amorphization threshold at RT using the implantation dose of 2×1013 ions cm–2 at a constant flux of 0.1 žA cm–2. Then the implanted samples were irradiated with a scanned beam of 1 MeV electrons from a Van de Graaff accelerator in a dose range (0.5–5.0)×1017 cm–2 at 320 K. RBS and channeling spectroscopy of 1.7 MeV 4He+ ions were used to determine the depth distribution of defect concentration before and after 1 MeV irradiations. New results of an "oscillatory" behaviour of the damage level as a function of 1 MeV electron fluence are presented.

Słowa kluczowe

EN

electron annealing; GaAs; implantation

• Wydawca: Institute of Nuclear Chemistry and Technology
• Czasopismo: Nukleonika
• Rocznik: 2000
• Tom: Vol. 45, nr 4
• Strony: 225--228
• Opis fizyczny: Bibliogr. 14 poz., rys.

Twórcy

autor

Warchoł S.

autor

Rzewuski H.

autor

Krynicki J.

autor

Grötzschel R.

• Department of Radiation Chemistry and Technology, Institute of Nuclear Chemistry and Technology, 16 Dorodna Str., 03-195 Warsaw, Poland, Tel.: [phone], Fax: [phone],