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The influence of 1 MeV electron irradiation on the stability of post-implantation defects in GaAs has been investigated. The n-type GaAs wafers of <100> orientation were implanted with 150 keV As+ ions below the amorphization threshold at RT using the implantation dose of 2×1013 ions cm–2 at a constant flux of 0.1 žA cm–2. Then the implanted samples were irradiated with a scanned beam of 1 MeV electrons from a Van de Graaff accelerator in a dose range (0.5–5.0)×1017 cm–2 at 320 K. RBS and channeling spectroscopy of 1.7 MeV 4He+ ions were used to determine the depth distribution of defect concentration before and after 1 MeV irradiations. New results of an "oscillatory" behaviour of the damage level as a function of 1 MeV electron fluence are presented.
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225--228
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Bibliogr. 14 poz., rys.
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- Department of Radiation Chemistry and Technology, Institute of Nuclear Chemistry and Technology, 16 Dorodna Str., 03-195 Warsaw, Poland, Tel.: +4822/ 8112347, Fax: +4822/ 8111532, warchol@orange.ichtj.waw.pl
Bibliografia
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Bibliografia
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bwmeta1.element.baztech-article-BUJ5-0004-0117