Monolithic silicon E-DeltaE telescope produced by the Quasi-Selective Epitaxy

• Autorzy: Kordyasz A. , Nossarzewska-Orłowska E. , Piasecki E. , Lipiński D. , Brzozowski A.
• Języki publikacji: EN

Abstrakty

EN

A monolithic, silicon, E-DeltaE telescope with a 20 žm thick DeltaE detector followed by a 300 žm thick E detector based on the n-p+-n structure was produced using a new developed process named Quasi-Selective Epitaxy (QSE). The resistivity profile of the n-p+-n structure and E-DeltaE two-dimensional contour plots obtained after irradiation of the monolithic E-DeltaE telescope by alfa-particles are presented. An energy resolution of about 1 MeV was obtained.

Słowa kluczowe

EN

monolithic E-DeltaE telescope; quasi-selective epitaxy

• Wydawca: Institute of Nuclear Chemistry and Technology
• Czasopismo: Nukleonika
• Rocznik: 2003
• Tom: Vol. 48, nr 1
• Strony: 31--34
• Opis fizyczny: Bibliogr. 8 poz., rys.

Twórcy

autor

Kordyasz A.

• Heavy Ion Laboratory, University of Warsaw, 5A Pasteura Str., 02-093 Warsaw, Poland, Tel.: [phone], Fax: [phone]

autor

Nossarzewska-Orłowska E.

• Institute of Electronic Materials Technology, 133 Wólczyńska Str., 01-919 Warsaw, Poland

autor

Piasecki E.

• Institute of Experimental Physics, University of Warsaw, 69 Hoża Str., 00-681 Warsaw, Poland

autor

Lipiński D.

• Institute of Electronic Materials Technology, 133 Wólczyńska Str., 01-919 Warsaw, Poland

autor

Brzozowski A.

• Institute of Electronic Materials Technology, 133 Wólczyńska Str., 01-919 Warsaw, Poland

• Heavy Ion Laboratory, University of Warsaw, 5A Pasteura Str., 02-093 Warsaw, Poland, Tel.: [phone], Fax: [phone]

Bibliografia

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• 5. Kim Y, Kim C, Husimi K, Ohkawa S, Fuchi Y, Osada S (1984) Epitaxial integrated dE1-dE2 silicon detectors. Nucl Instrum Meth 226:125−128
• 6. Kim Y, Kim C, Okhawa S et al. (1986) Self-biased silicon detectors with a built-in field for measuring heavy charged particles. IEEE Trans Nucl Sci 33;1:321−325
• 7. Knabe H, Mizushima Y, Kimura T, Kajiyama K (1976) High-speed silicon avalanche photodiodes with built-in field. J Appl Phys 47;8:3749−3751
• 8. Kordyasz AJ, Nossarzewska-Orłowska E, Sarnecki J (1996) Large area silicon detectors with built-in field. Nukleonika 41;4:23−28