Phenomenological Description of the Effect of Micro-Shear Banding in Micromechanical Modelling of Polycrystal Plasticity

• Autorzy: Kowalczyk-Gajewska K. , Pęcherski R. B.

Warianty tytułu

PL

Fenomenologiczny opis efektu mikropasm ścinania w mikromechanicznym modelowaniu plastyczności polikryształów

• Języki publikacji: EN

Abstrakty

EN

The rigid-plastic crystal plasticity model accounting for the effect of micro-shear banding mechanism on the reduction of the global strain hardening rate is presented. The instantaneous contribution of micro-shear bands in the rate of plastic deformation is described by means of the constitutive function fMS that depends on the type of strain path specified by the current direction of strain rate tensor. The capabilities of the model are explored by studying the strain-stress behavior of polycrystalline material together with the crystallographic texture evolution in the polycrystalline element.

PL

Przedstawiono sztywno-plastyczny model plastyczności kryształów uwzględniający wpływ mikropasm ścinania na redukcje globalnego modułu umocnienia. Chwilowy udział mikro-pasm ścinania w prędkości deformacji plastycznej został opisany poprzez dodatkowa konstytutywna funkcje fMS, która zależy od schematu odkształcenia zdefiniowanego przez aktualny kierunek tensora prędkości odkształceń. Zbadano możliwości proponowanego modelu mikromechanicznego w ramach analizy odpowiedzi materiału polikrystalicznego z uwzględnieniem rozwoju tekstury krystalograficznej.

Słowa kluczowe

EN

crystallographic texture; anisotropic material; crystal plasticity; polycrystalline material; micro-shear banding

PL

tekstura krystaliczna; model plastyczności; materiał polikrystaliczny; mikropasma ścinania

• Wydawca: Institute of Metallurgy and Materials Science of Polish Academy of Sciences ; Committee of Materials Engineering and Metallurgy of Polish Academy of Sciences
• Czasopismo: Archives of Metallurgy and Materials
• Rocznik: 2009
• Tom: Vol. 54, iss. 4
• Strony: 1145--1156
• Opis fizyczny: Bibliogr. 35 poz., rys., tab.

Twórcy

autor

Kowalczyk-Gajewska K.

autor

Pęcherski R. B.

• Institute of Fundamental Technological Rsearch of the Polish Academy of Sciences, 02-106 Warszawa, 5b Pawinskiego Str., Poland

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