Measurement and analysis of thermal parameters and efficiency of laser heterostructures and light-emitting diodes

• Autorzy: Bumai Y. A. , Vaskou A. S. , Kononenko V. K.
• Języki publikacji: EN

Abstrakty

EN

A thermal resistance characterization of semiconductor quantum-well heterolasers in the AlGaInAs-AlGaAs system (λst ≈ 0.8 μm), GaSb-based laser diodes (λst ≈ 2 μm), and power GaN light-emitting diodes (visible spectral region) was performed. The characterization consists in investigations of transient electrical processes in the diode sources under heating by direct current. The time dependence of the heating temperature of the active region of a source ΔT(t), calculated from direct bias change, is analyzed using a thermal RTCT equivalent circuit (the Foster and Cauer models), where RT is the thermal resistance and CT is the heat capacity of the source elements and external heat sink. By the developed method, thermal resistances of internal elements of the heterolasers and light-emitting diodes are determined. The dominant contribution of a die attach layer to the internal thermal resistance of both heterolaser sources and light-emitting diodes is observed. Based on the performed thermal characterization, the dependence of the optical power efficiency on current for the laser diodes is determined.

Słowa kluczowe

EN

heterostructure; light-emitting diode; thermal resistance; efficiency

• Wydawca: Komitet Metrologii i Aparatury Naukowej PAN
• Czasopismo: Metrology and Measurement Systems
• Rocznik: 2010
• Tom: Vol. 17, nr 1
• Strony: 39--45
• Opis fizyczny: Bibliogr. 17 poz., rys., wykr., wzory

Twórcy

autor

Bumai Y. A.

autor

Vaskou A. S.

autor

Kononenko V. K.

• Belarusian National Technical University, Independence Ave., 65, 220013 Minsk, Belarus,

Bibliografia

• [1] V.P. Gribkovskii: “Injection lasers”. Prog. Quantum Electron., vol. 19, no. 1, 1995, pp. 41-88.
• [2] L.A. Coldren, S.W. Corzine: Diode Lasers and Photonic Integrated Circuits. John Wiley, N.Y., 1995.
• [3] B. Mrozievich, M. Bugajski, W. Nakwaski: Physics of Semiconductor Lasers. North Holland, Amsterdam, 1991.
• [4] J. Fitzpatrick: “Laser diode arrays: pump up the power”. Photonics Spectra, vol. 29, no. 11, 1995, pp. 105-108.
• [5] R.V. Steele: “Diode doldrums”. Laser Focus World, vol. 42, no. 2, 2006, pp. 69-78.
• [6] A. Joullié, P. Christol: “GaSb-based mid-infrared 2-5 mm laser diodes”. C. R. Physique, vol. 4, no. 6, 2003, pp. 621-637.
• [7] A. Vicet, D.A. Yarekha, A. Pérona, Y. Rouillard, S. Gaillard, A.N. Baranov: “Trace gas detection with antimonide-based quantum-well diode lasers”. Spectrochimica Acta. Part A, vol. 58, no. 11, 2002, pp. 2405-2412.
• [8] I.V. Glukhikh, A.V. Matveentsev, S.S. Polikarpov, S.B. Sevastianov, A.P. Mayorov, A.D. Dub, V.G. Volkov, E.V. Gratsa: “0.81 μm CW laser bars with hyperthin InGaAs active layers”. Technical Program, XI Conf. on Laser Optics, June 30–July 4, 2003, St. Petersburg, p. 61.
• [9] K.A. Bulashevich, V.F. Mymrin, S.Yu. Karpov, D.M. Demidov, A.L. Ter-Martirosyan: “Effect of freecarrier absorption on performance of 808 nm AlGaAs-based high-power laser diodes”. Semicond. Sci. Technol., vol. 22, no. 5, 2007, pp. 502-510.
• [10] J.J. Hughes, D.B. Gilbert, F.Z. Hawrylo: “Measurement of the thermal resistance of packaged laser diodes”. RCA Rev., vol. 46, no. 2, 1985, pp. 200-213.
• [11] G.I. Ryabtsev, A.N. Kuzmin, J.A. Ges, Yu.P. Gorban, M. Soukieh, V.P. Konyaev, W. Stręk: “Thermal properties of high-power InGaAs/AlGaAs laser diodes”. J. Appl. Spectrosc., vol. 62, no. 5, 1995, pp. 900-902.
• [12] Yu.A. Bumai, A.S. Vaskou, D.S. Domanevskii: “Thermal processes in high-intensity InGaN/GaN lightemitting diodes”. Book of papers, 6th Belarussian-Russian Workshop „Semiconductor Lasers and Systems”, June 4-8, 2007, Minsk, pp. 108-112.
• [13] J. Hulett, C. Kelly: “Measuring LED junction temperature”. Photonics Spectra, vol. 42, no. 7, 2008, pp. 73-75.
• [14] J.W. Sofia: “Analysis of thermal transient data with synthesized dynamic models for semiconductor devices”. IEEE Trans. Components, Packaging, and Manufacturing Technol. Part A, vol. 18, no. 1, 1995, pp. 39-47.
• [15] V. Székely: “THERMODEL: a tool for compact dynamic thermal model generation”. Microelectron. J., vol. 29, no. 4-5, 1998, pp. 257-267.
• [16] Y.C. Gerstenmaier, G. Wachutka: “Rigorous model and network for transient thermal problems”. Microelectron. J., vol. 33, no. 9, 2002, pp. 719-725.
• [17] G. Farkas, Q.van V. Vader, A. Poppe, G. Bodnár: “Thermal investigation of high power optical devices by transient testing”. IEEE Trans. Components and Packaging Technol., vol. 28, no. 1, 2005, pp. 45-50.