Excitation-independent constant conductance ISFET driver

• Autorzy: Kokot M. , Ossowski T.
• Języki publikacji: EN

Abstrakty

EN

A new constant conductance driver for ISFETs sensors has been developed. The proposed circuit maintains the sensor operating point at constant drain-source conductance. The combination of a simple, self-balancing resistance bridge and the subtraction of half (or similar fraction) of source-drain voltage from the gate-source voltage provides independence of the output signal from current and voltage drivers instability. The use of precision current sources or high class operating amplifiers is not required. The operating point depends on precision bridge resistors only. The driver presented here simplifies applications of ISFET sensors in battery-powered handheld devices without the accuracy trade-off which the second part of the paper shows.

Słowa kluczowe

EN

ISFET; constant conductance driver; self-balancing resistance bridge; operating point stability

• Wydawca: Komitet Metrologii i Aparatury Naukowej PAN
• Czasopismo: Metrology and Measurement Systems
• Rocznik: 2009
• Tom: Vol. 16, nr 4
• Strony: 631--639
• Opis fizyczny: Bibliogr. 17 poz., rys., tab., wykr.

Twórcy

autor

Kokot M.

autor

Ossowski T.

• Gdansk University of Technology, Faculty of Electronics, Telecommunication and Informatics, G. Narutowicza 11/12, 80-952 Gdańsk, Poland,

Bibliografia

• [1] P. Bergveld: “Thirty years of ISFETOLOGY”. Sens. Actuators, B, Chem., vol. 88, 2003, pp. 1-20.
• [2] P. Bergveld: “ISFET, Theory and Practice”. IEEE Sensor Conference, Toronto 2003.
• [3] M. Yuqing, C. Jinrong, F. Keming: “New technology for the detection of pH”. J. Biochem. Biophys. Methods, vol. 63, 2005, pp.1-9.
• [4] A. Dybko: “Chemical sensors metrology”. Metrol. Meas. Syst., vol. 8, no. 4, 2001, pp. 357-365.
• [5] A. Dybko: “Automated measuring system for testing chemical sensors”. Metrol. Meas. Syst., vol. 8, no. 3, 2001, pp. 263-270.
• [6] M. Chudy, W. Wróblewski, A. Dybko, Z. Brzózka: “Natural Water Analysis Based on Multisensor System”. MIXDES Conference, Wrocław, Poland 2002.
• [7] J. Ogrodzki, L.J. Opalski: “Modeling of semiconductor ion sensors for CAD”. Proceedings of 6th MIXDES, Gdynia, Poland, 2000, pp. 253-257.
• [8] S. Casans, A.E. Navarro, D. Ramirez et al.: “Novel constant current driver for ISFET/MEMFETs characterization”. Sens. Actuators, B, Chem., vol. 76, 2001, pp. 629-633.
• [9] S. Casans, A.E. Navarro, D. Ramirez et al.: “Novel voltage-controlled conditioning circuit applied to the ISFETs temporary drift and thermal dependency”. Sens. Actuators, B, Chem., vol. 91, 2003, pp. 11-16.
• [10] B. Palan et al.: “New ISFET sensor interface circuit for biomedical applications”. Sens. Actuators, B, Chem., vol. 57, 1999, pp. 63-68.
• [11] W. Chung, C. Yang, D. Pijanowska, A. Krzyskow, W. Torbicz: “ISFET interface circuit embedded with noise rejection capability”. Electronics Letters, vol. 40, no. 18, 2004, pp. 1115-1116.
• [12] M. Kokot, T. Ossowski: “Constant conductance driver for ISFET”. PAK, vol. 54, no. 3, 2008, pp. 145-147. (in Polish)
• [13] J. Huang, G. Taylor: “Modeling of an ion-implanted silicon-gate depletion-mode IGFET”. Electron Devices, IEEE Transactions on, vol. 22, 1975, pp. 995-1001.
• [14] Ultralow Offset Voltage Operational Amplifier OP07. Datasheet from Analog Devices. Online: http://www.analog.com/static/imported-files/data_sheets/OP07.pdf [as of July 6, 2009].
• [15] B. Jaroszewicz, P. Grabiec, J. Koszur, A. Kosiubiński, Z. Brzózka: “Technology and Measurements of Backside Contacted ISFETs”. MIXDES Conference, Wrocław 2002.
• [16] G. Merckel, J. Borel, N. Cupcea: “An accurate large-signal MOS transistor model for use in computeraided design”. IEEE Transactions on, vol. 19, 1972, pp. 681-690.
• [17] Datasheets from Microchip. Online: http://www.microchip.com [as of September 3, 2009].