Design of high current fast switching power stage for pmsm servodrives

• Autorzy: Nalepa R. , Muckian J. , Levy H. , Kearney M.
• Języki publikacji: EN

Abstrakty

EN

Practical design and implementation of high performance and high reliability, dual axes, MOSFETs based Voltage Source Inverter (VSI) for two 28 V/500 Apk PMSMs is presented in this paper. An existing drive system based on IGBTs was used as the start point for this work. New power end is presented in brief. Main parasitic components of the power amplifier are identified and discussed. Locations for a standard R and C snubber components are included. Simple and reliable short circuit protection solution for paralleled MOSFETs is presented and its performance is analyzed over wide operating temperature range. Design solutions and experimental results are included and discussed.

Słowa kluczowe

EN

dual axes drive; voltage source inverter; short circuit protection of parallelled; MOSFETs

• Wydawca: Oficyna Wydawnicza Politechniki Wrocławskiej
• Czasopismo: Prace Naukowe Instytutu Maszyn, Napędów i Pomiarów Elektrycznych Politechniki Wrocławskiej. Studia i Materiały
• Rocznik: 2009
• Tom: Vol. 63, nr 29
• Strony: 439--446
• Opis fizyczny: Bibliogr. 6 poz.

Twórcy

autor

Nalepa R.

autor

Muckian J.

autor

Levy H.

autor

Kearney M.

• MOOG Ltd., Ringaskiddy, Co. Cork, Ireland,

Bibliografia

• [1] Bose B.K. (Ed.), Power electronics and Variable Frequency Drives – technology and Applications, iEEE press New York 1997
• [2] Krah J.O., Holtz J., High-Performance Currrent Regulation and Efficient PWM Implementation for Low-Inducante servo Motors, IEEE Transactions on Industry Applications, Vol. 35, No 5, Sept/Oct.1999
• [3] Mohan N., Undeland T.M. Robbins W.P. power Electronics – Converters, Applications and design, John Wilay & Sons, Inc., New york 1995.
• [4] Ren Y. XU M.X., Zhou J., Lee F.C. Analytical Loss Model of Power MOSFET, IEEE Trans. Power Electronics, Vol. 21. Mar. 2006, pp 310-319
• [5] Todd P.C., Snubber Circuits: theory, design and Application, Unitrode Corp., May 1993.
• [6] Winterhalter C., Kerkman R., Shlegel D.W., Leggate D., The effect of Circuit Parsitic Impedance on the Performance of IGBTs in Voltage Source Inverters, IEEE applied Power Electronics Conference (APEC’01), Anaheim, California, US, March 4-8, 2001