Investigation of strained InGaAs layers on GaAs substrate.

• Autorzy: Jasik A. , Sass J. , Mazur K. , Wesołowski M.
• Języki publikacji: EN

Abstrakty

EN

A set of In0.13Ga0.87As layers of various thicknesses on GaAs substrate has been grown by low pressure metalorganic vapour phase epitaxy (LP MOVPE). The initial stage of relaxation process has been investigated and critical layer thickness (CLT) has been determined. The investigations were performed by applying atomic force microscopy (AFM), high resolution X-ray diffractometry (HR XRD) with conventional and synchrotron radiation. The value of CLT determined by AFM observations agrees with that obtained from diffuse scattering measurements. The value is in agreement with HR XRD results.

Słowa kluczowe

EN

low pressure metalorganic vapour phase epitaxy (LP MOVPE); strained InGaAs layer; critical layer thickness; high resolution X-ray diffractometry (HR XRD); diffuse scattering; atomic force microscopy (AFM); misfit dislocation; plastic relaxation

• Wydawca: Oficyna Wydawnicza Politechniki Wrocławskiej
• Czasopismo: Optica Applicata
• Rocznik: 2007
• Tom: Vol. 37, nr 3
• Strony: 237--242
• Opis fizyczny: Bibliogr. 6 poz.

Twórcy

autor

Jasik A.

autor

Sass J.

autor

Mazur K.

autor

Wesołowski M.

• Institute of Electron Tecnology , al Lotników 32/46 02-668 Warszawa, Poland

Bibliografia

• [1] KÖPF C., KOSINA H., SELBERHERR S., Physical models for strained and relaxed GaInAs alloys: band structure and low-field transport, Solid State Electronics 41(8), 1997, pp. 1139–52.
• [2] NAWAZ M., ZIRATH H., CHOUMAS E., PERSSON S.H.M., JASIK A., STRUPIŃSKI W., Hot electron degradation effects in 0.14 μm AlInAs-GaInAs-InP HEMTs, Microelectronics Reliability 39(12), 1999, pp. 1765–71.
• [3] ROMANATO F., NAPOLITANI E., CARNERA A., DRIGO A.V., LAZZARINI L., SALVIATI G., FERRARI C., BOSACCHI A., FRANCHI S., Strain relaxation in graded composition InxGa1–x As/GaAs buffer layers, Journal of Applied Physics 86(9), 1999, pp. 4748–55.
• [4] MICELI P.F., WEATHERWAX J., KRENTSEL T., PALMSTOM C.J., Specular and diffuse reflectivity from thin films containing misfit dislocations, Physica B 221(1–4), 1996, pp. 230–4.
• [5] JASIK A., KOSIEL K., STRUPIŃSKI W., WESOŁOWSKI M., Influence of covering on critical thickness of strained InxGa1–xAs layer, Thin Solid Films 412(1–2), 2002, pp. 50–4.
• [6] SASS J., MAZUR K., EICHHORN F., STRUPINSKI W., TUROS A., SCHELL N., Determination of In concentration in InGaAs/GaAs 001 epilayers in the early stage of anisotropic stress relaxation, Journal of Alloys and Compounds 401(1–2), 2005, pp. 249–53.