Scalar and vectorial approaches to cavity modes of the GaAs-based 1.3-mm oxide-confined edge emitting diode laser.

• Autorzy: Czyszanowski T. , Nakwaski W.
• Języki publikacji: EN

Abstrakty

EN

The modelling of optical fields within cavities of GaAs-based oxide-confined edge-emitting diode lasers is analysed treating the 1.3-mm InGaAs/GaAs quantum-well laser as an example of a typical device. Usability of two different optical approaches is compared. While in the first approach, based on the scalar wave simplification, optical fields within laser resonators are found to be composed of the TE modes, an alternative, more precise vectorial approach leads to the hybrid modes: EH and HE. Advantages and disadvantages of both methods are discussed and their validity limits in determination of mode intensities are compared. Simplified scalar approaches have often happened to be surprisingly exact, except for their weaker guidance occurring for higher-order modes, narrower aperture widths and/or thinner oxidation layers, when more exact but also more time-consuming vectorial approaches should be exclusively used.

Słowa kluczowe

EN

laser simulations; laser modes; edge emitting diode laser

• Wydawca: Oficyna Wydawnicza Politechniki Wrocławskiej
• Czasopismo: Optica Applicata
• Rocznik: 2007
• Tom: Vol. 37, nr 3
• Strony: 209--218
• Opis fizyczny: Bibliogr. 10 poz.

Twórcy

autor

Czyszanowski T.

autor

Nakwaski W.

• Laboratory of Computer Physics, Institute of Physics, Technical University of Łódź, ul. Wólczańska 219, 90-924 Łodź, Poland

Bibliografia

• [1] BERGMANN M.J., CASEY H.C. JR., Optical-field calculations for lossy multiple-layer AlxGa1–xN/ InxGa1–xN laser diodes, Journal of Applied Physics 84(3), 1998, pp. 1196–203.
• [2] MARRIS D., CORDAT A., PASCAL D., KOSTER A., CASSAN E., VIVIEN L., LAVAL S., Design of a SiGe-Si quantum-well optical modulator, IEEE Journal of Selected Topics in Quantum Electronics 9(3), 2003, pp. 747–54.
• [3] SERRAT C., VAN EXTER M.P., VAN DRUTEN N.J., WOERDMAN J.P., Transverse mode formation in microlasers by combined gain- and index-guiding, IEEE Journal of Quantum Electronics 35(9), 1999, pp. 1314–21.
• [4] CZYSZANOWSKI T., NAKWASKI W., Mode transformation enhanced in nitride diode lasers by modification of their buffer layers, Journal of Physics D: Applied Physics 34(9), 2001, pp. 1277–85.
• [5] SALEH B.E.A., TEICH M.C., Fundamentals of Photonics, John Wiley & Sons, New York 1991.
• [6] CZYSZANOWSKI T., WASIAK M., NAKWASKI W., Design considerations for GaAs/(AlGa)As SCH and GRIN-SCH quantum-well laser structures. I. The model, Optica Applicata 31(2), 2001, pp. 313–23.
• [7] ROGGE U., Method of Lines for the Analysis of Dielectric Waveguides, PhD Thesis, Fern Universitat, Hagen 1991.
• [8] KONDO T., ARAI M., ONOMURA A., MIYAMOTO T., KOYAMA F., 1.23 μm long wavelength highly strained GaInAs/GaAs quantum well laser, 15th Annual Meeting of the IEEE Lasers and Electro-Optics Society, Vol. 2, p. 618.
• [9] JENKINS D.W., Optical constants of AlxGa1–xAs, Journal of Applied Physics 68(4), 1990, pp. 1848–53.
• [10] ADACHI S., Physical Properties of III-V Semiconductor Compounds, John Wiley & Sons, New York 1992.