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Broadband dielectric spectroscopy of ALl/Lu2O3/Al thin film sandwiches.

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Warianty tytułu
Konferencja
APTADM 2007, III International Conference on Advances in Processing Testing and Application of Dielectric Materials., September, 26-28, 2007 Wrocław, Poland
Języki publikacji
EN
Abstrakty
EN
The paper focuses on the dielectric characterization of electron-beam deposited lutetium oxide thin films sandwiched between aluminium electrodes. The complex capacitance characteristics were measured in the frequency domain (from 10/xHz to 10MHz) with dielectric response analyser. The influence of the temperature, the insulator thickness and sample aging on C'(u>) and C"((D) characteristics was examined. It was shown that high-frequency/low-temperature dielectric data are assigned to the volume of lutetium oxide film, whereas the low-frequency/high-temperature results are connected with M/I interfaces. The width of near-electrode regions (Schottky barriers) was estimated (k = 2.6-4.7 nm).
Twórcy
  • Institute of Physics, Wroclaw University of Technology, 50-370 Wroclaw, Wybrzeze Wyspianskiego 27, POLAND
Bibliografia
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  • [6] Niinisto L., Paivasaari J., Niinisto J., Putkonen M., Nieminen M., Advanced electronic and optoelectronic materials by Atomic Layer deposition: An overview with special emphasis on recent progress in processing of high -k dielectrics and other oxide materials, Phys. Stat. Sol. (a), Vol. 201, 2004, pp. 1443-1452.
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  • [11] Guo H., Yin M., Dong N., Xu M., Lou L., Zhang W„ Effect of Heat Treatment on the Luminescent Properties of Lu2Oy.Eu Film Prepared by Pechini Sol-Gel Method, Appl. Surface Sci., Vol. 243, 2005, pp. 245-250.
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  • [13] Wiktorczyk T., Optical properties of lutetium oxide films, Optica Applicata, Vol. 31, 2001, pp. 83-92.
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  • [18] Nadkarni G.S., Simmons J.G., Theory and analyses of the ac characteristics of, defect thin-film insulators, J. Appl. Phys., Vol. 47, 1976, pp. 114-119.
Typ dokumentu
Bibliografia
Identyfikator YADDA
bwmeta1.element.baztech-article-BPW9-0004-0047
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