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A detailed study has been presented of optical, electrical, structural and magnetic properties of Zn1.xCoxO (0 < x ≤ 0.25) films co-doped with 1 at. % of Al. The polycrystalline films have been synthesized on Corning glass 7059 substrates by the sol-gel technique using spin coating. Highly preferential c-axis oriented films have been obtained at the annealing temperature of 600 ° C. The lattice constant d of c-axis wurtzite Zn1.x.yCoxAlyO obeys Vegard�fs law for (0 < x ≤ 0.25). The inclusion of Al in ZnO is highly beneficial for the magnetism in ZnO because it enhances the free electron density. Optical spectra measurements reveal that band gap energy exhibits a blue shift upon increasing Co concentration. A positive magnetoresistance for Co doped ZnO and negative magnetoresistance for ZnO without cobalt at 77 K has been observed. The ferromagnetic behaviour has been confirmed by measurements using superconducting quantum interference device. The coercive field and the remanence increase with increase in Co content.
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Tom
Strony
659--673
Opis fizyczny
Bibliogr. 26 poz.
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autor
autor
- Department of Electronic Science, University of Delhi, South Campus, New Delhi 110021, India, rammehra2003@yahoo.com
Bibliografia
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Typ dokumentu
Bibliografia
Identyfikator YADDA
bwmeta1.element.baztech-article-BPW8-0006-0037