Optical characterization of nanoporous GaN Through Electroless Wet Chemical Etching

• Autorzy: Chuah L.S. , Hassan Z. , Abu Hassan H.
• Języki publikacji: EN

Abstrakty

EN

High quality unintentionally doped n-type GaN layers were grown on Si(111) substrate, using AlN as the buffer layer, by radio frequency (RF) nitrogen molecular beam epitaxy. The present work reports on the photoluminescence (PL) studies of porous GaN prepared by ultraviolet assisted electrochemical etching in a solution of 2:1:1 HF:CH3OH:H2O2 under illumination of an UV lamp with 500 W power for 10, 25 and 35 min. The optical properties of porous GaN samples were compared to the corresponding asgrown GaN. PL studies suggested that the porosity was capable of improving the lattice mismatch induced strain. Porosity induced PL intensity enhancement was found in nanoporous samples. The resulting nanoporous GaN displays blue-shifted PL spectra compared to the as-grown GaN. Appearance of the blue-shifted emission is correlated with the development of highly anisotropic structures in the morphology.

Słowa kluczowe

EN

photoluminescence; porous GaN; electrochemical etching; Si; RF-MBE

• Wydawca: De Gruyter
• Czasopismo: Materials Science Poland
• Rocznik: 2008
• Tom: Vol. 26, No. 3
• Strony: 609--615
• Opis fizyczny: Bibliogr. 17 poz.

Twórcy

autor

Chuah L.S.

autor

Hassan Z.

autor

Abu Hassan H.

• Nano-Optoelectronics Research and Technology Laboratory, School of Physics, Universiti Sains Malaysia, 11800 Minden, Penang, Malaysia,

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