Epitaxial films of GaInPAsSb quinary solid solutions

• Autorzy: Kuznetsov V. V. , Rubtsov E. R. , Kognovitskaya E. A.
• Konferencja: 8th International Conference on Intermolecular and Magnetic Interaction in Matter, Nałeczów 8-10 September 2005
• Języki publikacji: EN

Abstrakty

EN

The method of the obtaining quinary solid solutions on the basis of A IIIBV compounds (GalnPAsSb) with specified properties was developed. New GaInPAsSb/GaSb, GalnPAsSb/InAs heterostructures were obtained to create optoelectronic devices for the 2-5 urn spectral range. The broken-gap type II hetero junction was formed at the InAs/Ga0.92In 0.08P0.05As0.08Sb0.87 heterostructure, and a light-emitting diode was fabricated with the emission intensity maximum at 1.9 žm.

Słowa kluczowe

EN

solid solution; liquid phase epitaxy; antimonide; semiconducting III-V materials; light-emitting diode

PL

roztwór stały; epitaksja z fazy ciekłej; antymonki; półprzewodniki III-V; dioda elektroluminescencyjna; dioda emisyjna; związki galu

• Wydawca: De Gruyter
• Czasopismo: Materials Science Poland
• Rocznik: 2006
• Tom: Vol. 24, No. 4
• Strony: 1057--1066
• Opis fizyczny: Bibliogr. 16 poz.

Twórcy

autor

Kuznetsov V. V.

autor

Rubtsov E. R.

autor

Kognovitskaya E. A.

• St. Petersburg State Electrotechnical University, 197376, St. Petersburg, Prof. Popova 5, Russia,

Bibliografia

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