Graded SiOxNy layers as antireflection coatings for solar cells application

• Autorzy: Lipiński M. , Kluska S. , Czternastek H. , Zięba P.
• Konferencja: 8th International Conference on Intermolecular and Magnetic Interaction in Matter, Nałeczów 8-10 September 2005
• Języki publikacji: EN

Abstrakty

EN

The results of theoretical optical optimization of the graded index oxynitride antireflection coatings for silicon solar cells are presented. The calculation of reflectance and absorption of layers were carried out using the Bruggeman effective medium approximation with various concentration profiles of SiNx:H in the SiO2 matrices. The experimental optical data of SiNx:H layers deposited by RF (13.56 MHz) plasma enhanced chemical vapour deposition system in various conditions were used for simulation. The highest improvement of the short-circuit current JSC (44.6%) was obtained with an SiOxNy graded layer for SiNx:H with a low refractive index (2.1 at 600 nm) and abrupt concentration profile which is characteristic of a double layer SiO 2-SiNx:H. The graded index profile can be advantageous for SiNx:H with higher indices (n greater than or equal 2.4). Moreover, the enhancement of JSC obtained by application of the antireflection coating is smaller (42.3% for n = 2.4) in this case. The improvement should be higher if the effect of surface passivation is taken into account.

Słowa kluczowe

EN

graded refractive index; oxynitride; antireflection coatings

PL

współczynnik załamania; powłoka antyrefleksyjna; azotek krzemu; krzemowe ogniwo słoneczne

• Wydawca: De Gruyter
• Czasopismo: Materials Science Poland
• Rocznik: 2006
• Tom: Vol. 24, No. 4
• Strony: 1009--1016
• Opis fizyczny: Bibliogr. 8 poz.

Twórcy

autor

Lipiński M.

autor

Kluska S.

autor

Czternastek H.

autor

Zięba P.

• Institute of Metallurgy and Materials Science of the Polish Academy of Sciences, Reymonta 25, 30-059 Cracow,

Bibliografia

• [1] CHEN Z. AND ROCHATGI A., Proc. 1st WCPEC, Hawaii, 1994, p.1331.
• [2] LIPIŃSKI M., ZIĘBA P., JONAS S., KLUSKA S., SOKOŁOWSKI M., CZTERNASTEK H., Opto-Electr. Rev., 12 (2004), 41.
• [3] MAHDJOUB A., ZIGHED L., Thin Solid Films, 478 (2005), 299.
• [4] THEISS W., SCOUT version 2.3, web: www.mtheiss.com.
• [5] SNYDER P.G., XIONG Y.-M., WOOLAM J.A., AL-JUMAILY G.A., GAGLIARDI F. J., J. Vac. Sci. Technol., A10 (1992), 1462.
• [6] BRUGGEMAN A. G., Ann. Phys. (Leipzig), 24 (1935), 636.
• [7] BASORE P.A., CLUGSTON D.A., PC-1D vers.5.4, web: www.pv.unsw.edu.au.
• [8] NAGEL H., ABERLE A.G., HEZEL R., Prog. Photovolt.: Res. Appl., 7 (1999), 245.