Analysis of the processes of silicon epitaxial lateral overgrowth in Ar ambient gas

• Autorzy: Jóźwik I. , Olchowik J. M.
• Konferencja: 8th International Conference on Intermolecular and Magnetic Interaction in Matter, Nałeczów 8-10 September 2005
• Języki publikacji: EN

Abstrakty

EN

Liquid phase epitaxy (LPE) and, in particular, epitaxial lateral overgrowth (ELO) is an attractive method of thin film deposition, owing to the simplicity of its technology and a reduced growth temperature. In this paper, we present recent results of the ELO of silicon layers carried out by means of LPE using Ar as an ambient gas, without any addition of hydrogen, potentially explosive gas, which makes this deposition technique a very safe process. The aim of the this work focused on the silicon ELO growth on partially masked substrates was to determine optimal conditions of growth resulting in ELO layers of the maximum aspect ratio and minimum defect density. Data presented herein clearly show that the epitaxial layers characterized by the maximum value of the aspect ratio can be obtained by application of the 0.25°C/min cooling rate. Noteworthy is the fact that in the same conditions the defect density achieves the minimum value of 1.07×104 cm-2, which is the amount smaller by the factor of 10 than the defect density of Si substrates used (1.7×105 cm-2). It confirms the ELO technique as a promising tool for the fabrication of low-defect density silicon layers of good morphology.

Słowa kluczowe

EN

liquid phase epitaxy; silicon thin films; crystal morphology

PL

cienkie warstwy; epitaksja z fazy ciekłej; cienka warstwa krzemowa; morfologia kryształu

• Wydawca: De Gruyter
• Czasopismo: Materials Science Poland
• Rocznik: 2006
• Tom: Vol. 24, No. 4
• Strony: 967--973
• Opis fizyczny: Bibliogr. 7 poz.

Twórcy

autor

Jóźwik I.

autor

Olchowik J. M.

• Institute of Physics, Lublin University of Technology, Nadbystrzycka 38, 20-618 Lublin, Poland,

Bibliografia

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