Effect of dislocation density on the efficiency of multicrystalline silicon solar cells

• Autorzy: Benmohamed Z. , Remram M.
• Języki publikacji: EN

Abstrakty

EN

The behaviour of structural defects is still one of the major problems in multicrystalline silicon. The properties of solar cells made from these materials are mainly determined by dislocations, grain boundaries and intragrain defect impurities such as oxygen and carbon. Interactions between dislocations and impurities are also an important factor influencing the minority carrier diffusion length and then multicrystalline solar cells performances. In this paper, the effect of dislocations on minority carrier diffusion length is analysed and discussed. We carried out the calculation on the cell efficiency of multicrystalline silicon solar cell obtained from wafers cut put of ingots grown by Polix of Photowatt and Sitix of Sumitomo. A comparison between solar cells efficiency for the two materials outlined above is presented. Performances of the cells are estimated according to the last technological processes developed. The analyses have also been carried out to optimize solar cell performances by combining the effect of a double antireflection coating and back surface field.

Słowa kluczowe

EN

multicrystalline silicon; efficiency; dislocation; impurity; antireflection coatings

PL

krzem; ogniwa słoneczne; efektywność; dyslokacja; zanieczyszczenia; powłoka antyrefleksyjna

• Wydawca: De Gruyter
• Czasopismo: Materials Science Poland
• Rocznik: 2007
• Tom: Vol. 25, No. 1
• Strony: 243--249
• Opis fizyczny: Bibliogr. 10 poz.

Twórcy

autor

Benmohamed Z.

autor

Remram M.

• Département d'Electronique, Université Mentouri de Constantine, 25000, Algeria

Bibliografia

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