PTFE encapsulation for pentacene based organic thin film transistors

• Autorzy: Pannemann C. , Diekmann T. , Hilleringmann U. , Schurmann U. , Scharnberg M. , Zaporojtchenko V. , Adelung R , Faupel F.
• Języki publikacji: EN

Abstrakty

EN

Unprotected organic devices suffer from degradation due to water and oxygen incorporation. To validate the function of organic thin film transistor capsulation, interdigital transistor structures (WIL = 16 830 and WIL = 23 400) were prepared on p-type silicon wafers, and a high current was driven (initially up to -15 mA and -6.8 mA, respectively, at -40VDS, -40V GS) in order to detect their explicit reactions to degradation. Subsequently, the OTFT active layer was encapsulated with 1.5 urn of sputtered polytetrafluoroethylene (PTFE). The degradation experiment for 4 months in dark laboratory conditions revealed reduced degradation compared to earlier experiments using thinner protection films. During the experiment, the threshold voltage shifted in the positive direction, suggesting degradation only due to oxygen. Obviously, degradation due to humidity was blocked, as it would have caused a negative threshold voltage shift.

Słowa kluczowe

EN

pentacene; OTFT; nterdigital structure; degradation; encapsulation

PL

pentacen; struktura grzebieniowa; degradacja; obudowa

• Wydawca: De Gruyter
• Czasopismo: Materials Science Poland
• Rocznik: 2007
• Tom: Vol. 25, No. 1
• Strony: 95--101
• Opis fizyczny: Bibliogr. 10 poz.

Twórcy

autor

Pannemann C.

autor

Diekmann T.

autor

Hilleringmann U.

autor

Schurmann U.

autor

Scharnberg M.

autor

Zaporojtchenko V.

autor

Adelung R

autor

Faupel F.

• University of Paderborn, Department EIM-E/Sensorik, Warburger str. 100, D-33098 Paderborn,

Bibliografia

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