Experimental challenges for approaching local strain determination in silicon by nano-Raman spectroscopy

• Autorzy: Zhu L. , Atesang J. , Dudek P. , Hecker M. , Rinderknecht J. , Ritz Y. , Geisler H. , Herr U. , Geer R. , Zschech E.
• Języki publikacji: EN

Abstrakty

EN

Raman intensity enhancement induced by nanoprobes (metal particles and metallised tips) approached to a strained silicon sample surface is reported. With silver nanoparticles deposited onto a silicon surface, high enhancements in the vicinity of particles were observed. Furthermore, metallised tips were scanned inside the spot of the laser used for Raman measurements. Both silver-coated and pure silver tips, mounted onto a tuning fork, indicated high Raman signal enhancement for optimised tip position within the laser spot. Atomic force microscopy was performed on a structured sample to investigate the stability of these tips. Focused ion beam was utilized to refine and to re-sharpen pure silver tips after the measurements. Complementary measurements were performed using pure tungsten tips. Due to the high hardness of W wires, a special pre-etching technique was applied in this case.

Słowa kluczowe

EN

silicon; Raman scattering; Ag particles; tip enhanced Raman spectroscopy

PL

krzem; rozpraszanie ramanowskie; cząstki srebra; spektroskopia ramanowska; krzem rozciągany

• Wydawca: De Gruyter
• Czasopismo: Materials Science Poland
• Rocznik: 2007
• Tom: Vol. 25, No. 1
• Strony: 19--31
• Opis fizyczny: Bibliogr.22 poz.

Twórcy

autor

Zhu L.

autor

Atesang J.

autor

Dudek P.

autor

Hecker M.

autor

Rinderknecht J.

autor

Ritz Y.

autor

Geisler H.

autor

Herr U.

autor

Geer R.

autor

Zschech E.

• AMD Saxony LLC & Co. KG, Materials Analysis Department, Wilschdorfer Landstrasse 101, D-01109 Dresden, Germany,

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