Electrical properties of hybrid planar diode based on palladium phthalocyanine and titanium dioxide

• Autorzy: Jarosz G. , Kościelska B. , Signerski R.
• Języki publikacji: EN

Abstrakty

EN

This work presents experimental studies of a planar diode made of the layers of indium tin oxide, titanium dioxide, palladium phthalocyanine and gold. The current rectification ratio was 105 at 1.5 V. The analysis of the electrical properties of the system was based on small signal complex capacitance spectra measured in the frequency range of 25 Hz - 1 MHz at different values of bias. No depletion region at the TiO2/PdPc interface was observed. Forward bias specifically affected both parts of the complex capacitance and the observed effect probably resulted from the rearrangement of charge carriers injected into the organic layer.

Słowa kluczowe

EN

organic diode; palladium phthalocyanine; titanium dioxide

• Wydawca: De Gruyter
• Czasopismo: Materials Science Poland
• Rocznik: 2013
• Tom: Vol. 31, No. 1
• Strony: 14--18
• Opis fizyczny: Bibliogr. 21 poz., wykr.

Twórcy

autor

Jarosz G.

autor

Kościelska B.

autor

Signerski R.

• Faculty of Applied Physics and Mathematics, Gdansk University of Technology, G. Narutowicza 11/12, 80-233 Gdańsk, Poland

Bibliografia

• [1] SUN J., PAL N., JUNG B.J., KATZ H.E., Org. Electron., 10 (2009), 1.
• [2] KATSIA E., TALLARIDA G., FERRARI S., BUNDGAARD E., SNDERGAARD R., KREBS F.C., Microelectron. Eng., 85 (2008), 2439.
• [3] KATSIA E. et al., Org. Electron., 9 (2008), 1044.
• [4] LANE P.A., KAFAFI Z.H., Solid-State Organic Photovoltaics: A Review of Molecular and Polimeric Devices, in: S.-S. Sun, N.S. Sariciftci (Eds.), Organic Photovoltaics, Taylor & Francis, Boca Raton, 2005.
• [5] COAKLEY K.M., MC GEHEE M.D., Photovoltaic Cells Based on Nanoporous Titania Films Filled with Conjugated Polymers, in: S.-S. Sun, N.S. Sariciftci (Eds.), Organic Photovoltaics, Taylor & Francis, Boca Raton, 2005.
• [6] ITOH E., OHMORI Y., MIJAIRI K., Jpn. J. Appl. Phys., 43 (2004), 817.
• [7] THELAKKAT M., SCHMITZ C., SCHMIDT H.W., Adv. Mater., 14 (2002), 577.
• [8] INO D., WATANABE K., TAKAGI N., MATSUMOTO Y., J. Phys. Chem., B109 (2005), 18018.
• [9] SIGNERSKI R., KOSCIELSKA ´ B., Opt. Mater., 27 (2005), 1480.
• [10] SIGNERSKI R., JAROSZ G., KOSCIELSKA ´ B., J. NonCryst. Solids, 355 (2009), 1405.
• [11] SZE S.M., Physics of Semiconductors Devices, Wiley, New York, 1981.
• [12] GIEBNIK N.C., WIEDERRECHT G.P., WASIELEWSKI M.R., FORREST S.R., Phys. Rev. B, 82 (2010), 155305.
• [13] CHEYNS D. et al., Phys. Rev. B, 77 (2008), 165332.
• [14] KARL N. et al., J. Vac. Sci. Technol. A, 17 (1999), 2318.
• [15] KUSHTO G.P., MAKINEN ¨ A.J., LANE P.A.,IEEE J. Sel. Top. Quant., 16 (2010), 1552.
• [16] KIM I. et al.,Chem. Mater., 21 (2009), 4256.
• [17] HASSAN A.K., CHAURE N.B., RAY A.K., NABOK A.V., HABESCH S., J. Phys. D.: Appl. Phys., 36 (2003), 1120.
• [18] SAHINGOZ R., SOYKAN C., YAKUPHANOGLU F., VOIGT M., C¸ ETIN H., Opt. Mater., 28 (2006), 962.
• [19] USLU H., ALTINDAL S., DOKME ¨ I., J. Appl. Phys., 108 (2010), 104501.
• [20] JAROSZ G., Thin Solid Films, 516 (2008), 2255.
• [21] JAROSZ G., Thin Solid Films, 518 (2010), 4015.