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Thin films of non-stoichiometric indium antimonide (In0:66Sb0:34) have been deposited by electron beam evaporation technique on glass substrates at different substrate temperatures, (300-473 K). The films have polycrystalline nature with zinc blende structure. The decrease in electrical resistivity with increasing temperature shows semiconducting behavior. Hall measurements indicate that the films are of n-type. Optical transmission spectra of as deposited thin films have been measured at different substrate temperatures. All the electrical parameters i.e. electron mobility (m), carrier concentration (n), resistivity (r), activation energy and band gap (Eg) have been found to be temperature dependent. Suitable explanations are given in the paper.
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Czasopismo
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Tom
Strony
375--381
Opis fizyczny
Bibliogr. 24 poz., rys.
Twórcy
autor
autor
autor
autor
- Department of Physics & Electronics, Dr. R.M.L Avadh University, Faizabad- 224001, India
Bibliografia
- [1] MANGAL R.K., VIJAY Y.K., Bull. Mater. Sci.,30(2007)117.
- [2] MANGAL R.K., TRIAPTHI B., SINGH M., VIJAY Y.K.,RAIS A., Indian J. Pure & Applied Phys., 45 (2007) 987.
- [3] MANGAL R.K., VIJAY Y.K., AVATSHI D.K., SHEKHER B.R., Indian J. Engineering & Materials Science, 14 (2007) 253.
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- [14] VISHWAKARMA S.R., VERMA A.K., TRIPATHI R.S.N.,RAHUL, Proc. Natl. Acad. Sci., India, Sect. A Phys. Sci.,82 (2012), 245, DOI: 10.1007/s40010-012-0031-y.
- [15] RAHUL, VERMA A.K., TRIPATHI R.S.N., VISHWAKARMA S.R., Natl. Acad. Sci. Lett., DOI 10.1007/s40009-012-0060-8 (2012).
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- [17] MEEHTA C., ABASS J., SAINI G., TRIPATHI S., Chalcogenide Letter, 11 (2007), 133.
- [18] SINGH M., VIJAY Y.K., Indian Journal of Pure & Applied Physics, 42 (2004), 610.
- [19] SZE S.M., Physics of Semiconductor Devices, Ed.2, New Delhi, H.S. Poplai, Wiley Eastern Ltd, (1993) 31.
- [20] OKAMOTO A., SHIBASAKI I., Journal of Crystal Growth, 251 (2003), 560.
- [21] SENTHILKUMAR V., VENKATACHALAM S.,VISWANATH C., WILSON K.C., VIJAY KUMAR K.P., Cryst. Res. Technol., 40, 6 (2005), 573.
- [22] OKAMOTO A., ASHIHARA A., AKAOGI T., SHIBASAKI I., Journal of Crystal Growth, 227 (2001), 619.
- [23] ANI S.K.J., OBAID Y.N., KASIM S.J., MAHDI M.A.,Int. J. Nanoelectronics & Materials, 2 (2009), 109.
- [24] SINGH S., LAL K., SRIVASTAVA A., SOOD K.,KISHORE R., Indian Journal of Engineering & Material Sciences, 14 (2007), 55.
Typ dokumentu
Bibliografia
Identyfikator YADDA
bwmeta1.element.baztech-article-BPW7-0025-0024