Influence of thermal treatment on the formation of ohmic contacts based on Ti/Al/Ni/Au metallization to n-type AlGaN/GaN heterostructures

• Autorzy: Macherzyński W. , Paszkiewicz B. , Vincze A.
• Języki publikacji: EN

Abstrakty

EN

Interfacial reactions between Ti/Al/Ni/Au metallization and GaN(cap)/AlGaN/GaN heterostructures at various annealing temperatures ranging from 715 to 865 °C were studied. Electrical current-voltage (I-V) characteristics, van der Pauw Hall mobility measurements and surface topography measurement with atomic force microscopy (AFM) were performed. The ohmic metallizations were annealed at various temperatures in a rapid thermal annealing system and the annealing time of 60 seconds was kept for all samples. To study the in?uence of the parameters of annealing process on the properties of the 2 dimensional electron gas (2DEG) the van der Pauw Hall mobility measurement was used. Interfacial reactions between the contact metals and heterostructures were analyzed through depth pro?les of secondary ion mass spectroscopy. It was observed that transition from nonlinear to linear I-V behavior occurred after the annealing at 805 °C. For the studied samples, the most promising results were obtained for the annealing temperature of 805 °C. This temperatue ensured not only low contact resistance but also made possible to preserve the 2DEG.

Słowa kluczowe

EN

ohmic contact; AlGaN/GaN heterostructure; 2-dimensional electron gas (2DEG)

• Wydawca: De Gruyter
• Czasopismo: Materials Science Poland
• Rocznik: 2012
• Tom: Vol. 30, No. 4
• Strony: 342--347
• Opis fizyczny: Bibliogr. 9 poz., rys.

Twórcy

autor

Macherzyński W.

autor

Paszkiewicz B.

autor

Vincze A.

• Faculty of Microsystem Electronics and Photonics, Wroclaw University of Technology, 11/17 Janiszewskiego Street, 50-372 Wroclaw, Poland

Bibliografia

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