Properties of aluminium oxide thin films deposited in high effective reactive pulsed magnetron sputtering process

• Autorzy: Tadaszak K. , Nitsch K. , Piasecki T. , Posadowski W. M.
• Języki publikacji: EN

Abstrakty

EN

Pulsed magnetron sputtering of metal targets in the presence of reactive gas is widely used to deposit compound materials.This method is very popular but still the aim of research is to obtain more stable and efficient processes. The standard procedure of compound thin film deposition is sputtering in so called reactive mode of magnetron work - sputtering of the target surface covered with the formed compound. The authors postulate that the problem of low deposition rate of reactive compounds can be solved if the magnetron source operates in the metallic mode or near the border of metallic and transient mode. Aluminiumoxide thin films were deposited using high effective reactive pulsed magnetron sputtering. The main purpose of the research was electrical characterization of metal-compound-metal structures in the wide range of frequencies and determination of deposition technique influence on the thin film properties.

Słowa kluczowe

EN

aluminiumoxide thin films; metal targets; low deposition rate

• Wydawca: De Gruyter
• Czasopismo: Materials Science Poland
• Rocznik: 2012
• Tom: Vol. 30, No. 4
• Strony: 323--328
• Opis fizyczny: Bibliogr. 14 poz., rys.

Twórcy

autor

Tadaszak K.

autor

Nitsch K.

autor

Piasecki T.

autor

Posadowski W. M.

• Wrocław University of Technology, Faculty of Microsystem Electronics and Photonics, Janiszewskiego 11/17, 50-372 Wrocław, Poland

Bibliografia

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